FR1486287A - - Google Patents
Info
- Publication number
- FR1486287A FR1486287A FR1486287DA FR1486287A FR 1486287 A FR1486287 A FR 1486287A FR 1486287D A FR1486287D A FR 1486287DA FR 1486287 A FR1486287 A FR 1486287A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
-
- H10W72/00—
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47301565A | 1965-07-19 | 1965-07-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1486287A true FR1486287A (enExample) | 1967-10-05 |
Family
ID=23877832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1486287D Expired FR1486287A (enExample) | 1965-07-19 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3435303A (enExample) |
| FR (1) | FR1486287A (enExample) |
| GB (1) | GB1090605A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3518749A (en) * | 1968-02-23 | 1970-07-07 | Rca Corp | Method of making gunn-effect devices |
| JPS5641001B1 (enExample) * | 1971-04-30 | 1981-09-25 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB853876A (en) * | 1956-08-15 | 1960-11-09 | Sarkes Tarzian | Semiconductor diode |
| NL242214A (enExample) * | 1958-08-11 | |||
| US3154692A (en) * | 1960-01-08 | 1964-10-27 | Clevite Corp | Voltage regulating semiconductor device |
| US3364399A (en) * | 1964-07-15 | 1968-01-16 | Irc Inc | Array of transistors having a layer of soft metal film for dividing |
-
0
- FR FR1486287D patent/FR1486287A/fr not_active Expired
-
1965
- 1965-07-19 US US473015A patent/US3435303A/en not_active Expired - Lifetime
-
1966
- 1966-06-23 GB GB28029/66A patent/GB1090605A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1090605A (en) | 1967-11-08 |
| US3435303A (en) | 1969-03-25 |