FR1483095A - Method for obtaining the electrical isolation of separate areas in a layer of semiconductor material - Google Patents
Method for obtaining the electrical isolation of separate areas in a layer of semiconductor materialInfo
- Publication number
- FR1483095A FR1483095A FR63624A FR63624A FR1483095A FR 1483095 A FR1483095 A FR 1483095A FR 63624 A FR63624 A FR 63624A FR 63624 A FR63624 A FR 63624A FR 1483095 A FR1483095 A FR 1483095A
- Authority
- FR
- France
- Prior art keywords
- obtaining
- layer
- semiconductor material
- electrical isolation
- separate areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR63624A FR1483095A (en) | 1965-06-03 | 1966-06-01 | Method for obtaining the electrical isolation of separate areas in a layer of semiconductor material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46103065A | 1965-06-03 | 1965-06-03 | |
FR63624A FR1483095A (en) | 1965-06-03 | 1966-06-01 | Method for obtaining the electrical isolation of separate areas in a layer of semiconductor material |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1483095A true FR1483095A (en) | 1967-06-02 |
Family
ID=26171009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR63624A Expired FR1483095A (en) | 1965-06-03 | 1966-06-01 | Method for obtaining the electrical isolation of separate areas in a layer of semiconductor material |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1483095A (en) |
-
1966
- 1966-06-01 FR FR63624A patent/FR1483095A/en not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH478255A (en) | Method and device for the deposition of thin layers of conductive or semiconductor material | |
IT955960B (en) | MACHINE FOR INSERTING FIXING ELEMENTS IN LAYERS OF MATERIAL | |
IT991847B (en) | DEVICE FOR MEASURING STRESSES MANIFESTED ON THE SURFACE OF STRUCTURES OF MAGNETOSTRITIVE MATERIAL | |
IT969280B (en) | DEVICE FOR THE MANUFACTURE OF PREFABRICATED ELEMENTS IN FIBROUS MATERIAL | |
FR1479586A (en) | Method of manufacturing a tin oxide layer | |
FR1488701A (en) | Granular layer and method of manufacturing such a layer | |
FR1475315A (en) | Laminate sheet having an overhanging layer and method of manufacture | |
SE383729B (en) | CERAMIC MATERIAL WITH LAYER OF COOPERATION OF ENLARGEMENT AND METHOD OF ITS MANUFACTURE | |
IT998996B (en) | PROCEDURE FOR MANUFACTURING HOLLOW OBJECTS MADE OF SEMI-CONDUCTIVE MATERIAL THAT CAN BE HEATED DIRECTLY FOR DIFFUSION PURPOSES | |
CH480615A (en) | Laminate material coating layer | |
IT1012021B (en) | PRODUCTION OF COVERED MATERIAL FOR ROAD FLOORING | |
FR1483573A (en) | Method of forming sharply defined openings in an insulating layer | |
FR1483095A (en) | Method for obtaining the electrical isolation of separate areas in a layer of semiconductor material | |
CH443072A (en) | Method and device for covering the surface of objects with a layer of uniform thickness of a material | |
BE782119A (en) | THIN LAYER CIRCUITS MANUFACTURING PROCESS | |
FR2073158A5 (en) | PROCESS FOR WINDING A THIN LAYER OF LARGE WIDTH MATERIAL | |
IT991056B (en) | PROCEDURE AND METHOD FOR THE PRODUCTION OF EXPOSED OR EXTERNAL LAYERS OF STONE OR OTHER CELL PARTS ON THE SURFACE OF CONCRETE STRUCTURES OR OTHER HARDENING MATERIALS | |
IT952963B (en) | PROCEDURE FOR THE PRODUCTION OF FILMS CONTAINING SILICEOUS MATERIAL | |
FR1492600A (en) | Rough surface layer bondable coating material | |
IT981333B (en) | PROCEDURE FOR FORMING LAYERS OF SEMICONDUCTOR MATERIAL ON A SUBSTRATE | |
IT997659B (en) | DEVICE FOR THE APPLICATION OF THERMAL INSULATION MATERIAL ON STRUCTURES SUCH AS TANKS AND SIMILAR | |
FR1506752A (en) | Method for increasing the electrical surface conductivity and flowability of crystalline explosives | |
BE766105A (en) | METHOD OF MANUFACTURING AN ARTICLE IN VITRIFIED CERAMIC MATERIAL | |
BE806779A (en) | PROCESS FOR BONDING A LAYER OF NITRUPE OF BORON TO AN ELASTIC SUPPORT | |
CH464596A (en) | Installation for heating a layer of soil |