FR1446319A - Structure of a diode of a semiconductor integrated circuit - Google Patents

Structure of a diode of a semiconductor integrated circuit

Info

Publication number
FR1446319A
FR1446319A FR7906A FR7906A FR1446319A FR 1446319 A FR1446319 A FR 1446319A FR 7906 A FR7906 A FR 7906A FR 7906 A FR7906 A FR 7906A FR 1446319 A FR1446319 A FR 1446319A
Authority
FR
France
Prior art keywords
diode
integrated circuit
semiconductor integrated
semiconductor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7906A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US349868A external-priority patent/US3335341A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to FR7906A priority Critical patent/FR1446319A/en
Application granted granted Critical
Publication of FR1446319A publication Critical patent/FR1446319A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0664—Vertical bipolar transistor in combination with diodes
FR7906A 1964-03-06 1965-03-04 Structure of a diode of a semiconductor integrated circuit Expired FR1446319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7906A FR1446319A (en) 1964-03-06 1965-03-04 Structure of a diode of a semiconductor integrated circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US349868A US3335341A (en) 1964-03-06 1964-03-06 Diode structure in semiconductor integrated circuit and method of making the same
FR7906A FR1446319A (en) 1964-03-06 1965-03-04 Structure of a diode of a semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
FR1446319A true FR1446319A (en) 1966-07-22

Family

ID=26162280

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7906A Expired FR1446319A (en) 1964-03-06 1965-03-04 Structure of a diode of a semiconductor integrated circuit

Country Status (1)

Country Link
FR (1) FR1446319A (en)

Similar Documents

Publication Publication Date Title
FR1467117A (en) Semiconductor assembly for integrated circuit
FR1417760A (en) Integrated circuit semiconductor devices
FR1511986A (en) Semiconductor integrated circuits
FR1423482A (en) Coupled semiconductor lasers
FR1419323A (en) Semiconductor diode enhancements
FR1437276A (en) Integrated semiconductor circuit
FR1269094A (en) Semiconductor diode
AT303816B (en) Monolithically integrated semiconductor circuit arrangement
FR1397027A (en) Construction of a semiconductor diode
FR1456274A (en) Semiconductor Controlled Rectifier
CH419355A (en) Semiconductor rectifier
FR1446319A (en) Structure of a diode of a semiconductor integrated circuit
FR1445855A (en) semiconductor controlled rectifier element for high currents
CH426018A (en) Semiconductor component of the pnpn type
FR1464220A (en) Manufacture of a semiconductor device
CH451294A (en) Semiconductor circuit element
FR1459083A (en) Surface Oriented Semiconductor Diode
CH440461A (en) Semiconductor circuit arrangement
FR1477089A (en) Semiconductor rectifier
FR1458839A (en) Brightening agents
FR1348820A (en) Diode evaluation circuit
FR1464168A (en) Transistor logic circuit
FR1472985A (en) Semiconductor device
FR1460267A (en) Semiconductor device
FR1433200A (en) Semiconductor device