FR1429174A - Method of manufacturing a high voltage transistor of the n-p-n type, and transistor obtained by means of this method - Google Patents

Method of manufacturing a high voltage transistor of the n-p-n type, and transistor obtained by means of this method

Info

Publication number
FR1429174A
FR1429174A FR12407A FR12407A FR1429174A FR 1429174 A FR1429174 A FR 1429174A FR 12407 A FR12407 A FR 12407A FR 12407 A FR12407 A FR 12407A FR 1429174 A FR1429174 A FR 1429174A
Authority
FR
France
Prior art keywords
transistor
manufacturing
type
high voltage
voltage transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR12407A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZF International UK Ltd
Original Assignee
Lucas Industries Ltd
Joseph Lucas Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Industries Ltd, Joseph Lucas Industries Ltd filed Critical Lucas Industries Ltd
Priority to FR12407A priority Critical patent/FR1429174A/en
Application granted granted Critical
Publication of FR1429174A publication Critical patent/FR1429174A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
FR12407A 1964-04-20 1965-04-08 Method of manufacturing a high voltage transistor of the n-p-n type, and transistor obtained by means of this method Expired FR1429174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR12407A FR1429174A (en) 1964-04-20 1965-04-08 Method of manufacturing a high voltage transistor of the n-p-n type, and transistor obtained by means of this method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1631064 1964-04-20
FR12407A FR1429174A (en) 1964-04-20 1965-04-08 Method of manufacturing a high voltage transistor of the n-p-n type, and transistor obtained by means of this method

Publications (1)

Publication Number Publication Date
FR1429174A true FR1429174A (en) 1966-02-18

Family

ID=26162984

Family Applications (1)

Application Number Title Priority Date Filing Date
FR12407A Expired FR1429174A (en) 1964-04-20 1965-04-08 Method of manufacturing a high voltage transistor of the n-p-n type, and transistor obtained by means of this method

Country Status (1)

Country Link
FR (1) FR1429174A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764142B1 (en) * 1967-04-11 1971-12-09 Lucas Industries Ltd METHOD OF MANUFACTURING A HIGH IGNITION VOLTAGE NPN TRANSISTOR

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764142B1 (en) * 1967-04-11 1971-12-09 Lucas Industries Ltd METHOD OF MANUFACTURING A HIGH IGNITION VOLTAGE NPN TRANSISTOR

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