FR1422685A - Method of growing a crystal - Google Patents

Method of growing a crystal

Info

Publication number
FR1422685A
FR1422685A FR3364A FR3364A FR1422685A FR 1422685 A FR1422685 A FR 1422685A FR 3364 A FR3364 A FR 3364A FR 3364 A FR3364 A FR 3364A FR 1422685 A FR1422685 A FR 1422685A
Authority
FR
France
Prior art keywords
growing
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR3364A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US340701A external-priority patent/US3346414A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Priority to FR3364A priority Critical patent/FR1422685A/en
Application granted granted Critical
Publication of FR1422685A publication Critical patent/FR1422685A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12Vaporous components, e.g. vapour-liquid-solid-growth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR3364A 1964-01-28 1965-01-26 Method of growing a crystal Expired FR1422685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR3364A FR1422685A (en) 1964-01-28 1965-01-26 Method of growing a crystal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US340701A US3346414A (en) 1964-01-28 1964-01-28 Vapor-liquid-solid crystal growth technique
FR3364A FR1422685A (en) 1964-01-28 1965-01-26 Method of growing a crystal

Publications (1)

Publication Number Publication Date
FR1422685A true FR1422685A (en) 1965-12-24

Family

ID=26161728

Family Applications (1)

Application Number Title Priority Date Filing Date
FR3364A Expired FR1422685A (en) 1964-01-28 1965-01-26 Method of growing a crystal

Country Status (1)

Country Link
FR (1) FR1422685A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544305B1 (en) * 1965-12-08 1970-07-23 Sanyo Electric Co Method for growing at least one doped semiconductor crystal layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544305B1 (en) * 1965-12-08 1970-07-23 Sanyo Electric Co Method for growing at least one doped semiconductor crystal layer

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