FR1422685A - Method of growing a crystal - Google Patents
Method of growing a crystalInfo
- Publication number
- FR1422685A FR1422685A FR3364A FR3364A FR1422685A FR 1422685 A FR1422685 A FR 1422685A FR 3364 A FR3364 A FR 3364A FR 3364 A FR3364 A FR 3364A FR 1422685 A FR1422685 A FR 1422685A
- Authority
- FR
- France
- Prior art keywords
- growing
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR3364A FR1422685A (en) | 1964-01-28 | 1965-01-26 | Method of growing a crystal |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US340701A US3346414A (en) | 1964-01-28 | 1964-01-28 | Vapor-liquid-solid crystal growth technique |
FR3364A FR1422685A (en) | 1964-01-28 | 1965-01-26 | Method of growing a crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1422685A true FR1422685A (en) | 1965-12-24 |
Family
ID=26161728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR3364A Expired FR1422685A (en) | 1964-01-28 | 1965-01-26 | Method of growing a crystal |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1422685A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1544305B1 (en) * | 1965-12-08 | 1970-07-23 | Sanyo Electric Co | Method for growing at least one doped semiconductor crystal layer |
-
1965
- 1965-01-26 FR FR3364A patent/FR1422685A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1544305B1 (en) * | 1965-12-08 | 1970-07-23 | Sanyo Electric Co | Method for growing at least one doped semiconductor crystal layer |
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