FR1422498A - Dispositifs semi-conducteurs à faible courant de fuite à travers leur jonction - Google Patents

Dispositifs semi-conducteurs à faible courant de fuite à travers leur jonction

Info

Publication number
FR1422498A
FR1422498A FR2079A FR2079A FR1422498A FR 1422498 A FR1422498 A FR 1422498A FR 2079 A FR2079 A FR 2079A FR 2079 A FR2079 A FR 2079A FR 1422498 A FR1422498 A FR 1422498A
Authority
FR
France
Prior art keywords
junction
semiconductor devices
leakage current
low leakage
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR2079A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of FR1422498A publication Critical patent/FR1422498A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
FR2079A 1964-01-24 1965-01-15 Dispositifs semi-conducteurs à faible courant de fuite à travers leur jonction Expired FR1422498A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US339978A US3363152A (en) 1964-01-24 1964-01-24 Semiconductor devices with low leakage current across junction

Publications (1)

Publication Number Publication Date
FR1422498A true FR1422498A (fr) 1965-12-24

Family

ID=23331382

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2079A Expired FR1422498A (fr) 1964-01-24 1965-01-15 Dispositifs semi-conducteurs à faible courant de fuite à travers leur jonction

Country Status (5)

Country Link
US (1) US3363152A (enEXAMPLES)
BE (1) BE658787A (enEXAMPLES)
DE (1) DE1539070A1 (enEXAMPLES)
FR (1) FR1422498A (enEXAMPLES)
GB (1) GB1088795A (enEXAMPLES)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1155578A (en) * 1965-10-08 1969-06-18 Sony Corp Field Effect Transistor
NL6609002A (enEXAMPLES) * 1966-06-29 1968-01-02
US3453504A (en) * 1966-08-11 1969-07-01 Siliconix Inc Unipolar transistor
US3488564A (en) * 1968-04-01 1970-01-06 Fairchild Camera Instr Co Planar epitaxial resistors
US3967305A (en) * 1969-03-27 1976-06-29 Mcdonnell Douglas Corporation Multichannel junction field-effect transistor and process
US3611071A (en) * 1969-04-10 1971-10-05 Ibm Inversion prevention system for semiconductor devices
US3961358A (en) * 1973-02-21 1976-06-01 Rca Corporation Leakage current prevention in semiconductor integrated circuit devices
US3911461A (en) * 1974-11-07 1975-10-07 Motorola Inc Semiconductor device with improved reverse transient capability
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
DE3333242C2 (de) * 1982-09-13 1995-08-17 Nat Semiconductor Corp Monolithisch integrierter Halbleiterschaltkreis
DE4428018A1 (de) * 1994-08-08 1996-02-15 Bayer Ag Verfahren zur Herstellung von aromatischen Aminen

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2588254A (en) * 1950-05-09 1952-03-04 Purdue Research Foundation Photoelectric and thermoelectric device utilizing semiconducting material
US2898477A (en) * 1955-10-31 1959-08-04 Bell Telephone Labor Inc Piezoelectric field effect semiconductor device
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3051840A (en) * 1959-12-18 1962-08-28 Ibm Photosensitive field effect unit
NL123575C (enEXAMPLES) * 1960-04-01
US3184657A (en) * 1962-01-05 1965-05-18 Fairchild Camera Instr Co Nested region transistor configuration
NL294593A (enEXAMPLES) * 1962-06-29

Also Published As

Publication number Publication date
BE658787A (enEXAMPLES) 1965-05-17
US3363152A (en) 1968-01-09
DE1539070A1 (de) 1969-05-14
GB1088795A (en) 1967-10-25

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