FR1417462A - High voltage semiconductor device - Google Patents

High voltage semiconductor device

Info

Publication number
FR1417462A
FR1417462A FR996034A FR996034A FR1417462A FR 1417462 A FR1417462 A FR 1417462A FR 996034 A FR996034 A FR 996034A FR 996034 A FR996034 A FR 996034A FR 1417462 A FR1417462 A FR 1417462A
Authority
FR
France
Prior art keywords
semiconductor device
high voltage
voltage semiconductor
voltage
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR996034A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US325872A external-priority patent/US3320496A/en
Priority claimed from US325873A external-priority patent/US3278347A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Priority to FR996034A priority Critical patent/FR1417462A/en
Application granted granted Critical
Publication of FR1417462A publication Critical patent/FR1417462A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
FR996034A 1963-11-26 1964-11-24 High voltage semiconductor device Expired FR1417462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR996034A FR1417462A (en) 1963-11-26 1964-11-24 High voltage semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US325872A US3320496A (en) 1963-11-26 1963-11-26 High voltage semiconductor device
US325873A US3278347A (en) 1963-11-26 1963-11-26 High voltage semiconductor device
FR996034A FR1417462A (en) 1963-11-26 1964-11-24 High voltage semiconductor device

Publications (1)

Publication Number Publication Date
FR1417462A true FR1417462A (en) 1965-11-12

Family

ID=27248500

Family Applications (1)

Application Number Title Priority Date Filing Date
FR996034A Expired FR1417462A (en) 1963-11-26 1964-11-24 High voltage semiconductor device

Country Status (1)

Country Link
FR (1) FR1417462A (en)

Similar Documents

Publication Publication Date Title
FR1398424A (en) Semiconductor device
FR1386650A (en) Semiconductor device
FR1398262A (en) Semiconductor laser device
CH429953A (en) Semiconductor device
FR1543152A (en) High voltage switch device
AT264623B (en) Semiconductor thermoelectric device
FR1442641A (en) High voltage rectifier
FR1389820A (en) Semiconductor device
CH427043A (en) Semiconductor device
FR1417462A (en) High voltage semiconductor device
CH399601A (en) Semiconductor device
FR1357210A (en) New semiconductor device
FR1381896A (en) Semiconductor device
FR1401089A (en) Semiconductor device
FR1404152A (en) Semiconductor light emissive device
FR1360454A (en) High frequency interaction device
FR1402264A (en) Semiconductor device
FR1388459A (en) Semiconductor device
FR1401006A (en) Semiconductor device
FR1416861A (en) Semiconductor device
FR1409639A (en) Semiconductor device
FR1382888A (en) Semiconductor device
FR1390677A (en) Semiconductor device
FR1378760A (en) Semiconductor device
CH416847A (en) Semiconductor device