FR1410032A - Procédé et appareil de stimulation pour tiges semi-conductrices - Google Patents

Procédé et appareil de stimulation pour tiges semi-conductrices

Info

Publication number
FR1410032A
FR1410032A FR989767A FR989767A FR1410032A FR 1410032 A FR1410032 A FR 1410032A FR 989767 A FR989767 A FR 989767A FR 989767 A FR989767 A FR 989767A FR 1410032 A FR1410032 A FR 1410032A
Authority
FR
France
Prior art keywords
stimulation
semiconductor rods
rods
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR989767A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Priority to FR989767A priority Critical patent/FR1410032A/fr
Application granted granted Critical
Publication of FR1410032A publication Critical patent/FR1410032A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR989767A 1963-09-30 1964-09-29 Procédé et appareil de stimulation pour tiges semi-conductrices Expired FR1410032A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR989767A FR1410032A (fr) 1963-09-30 1964-09-29 Procédé et appareil de stimulation pour tiges semi-conductrices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31261363A 1963-09-30 1963-09-30
FR989767A FR1410032A (fr) 1963-09-30 1964-09-29 Procédé et appareil de stimulation pour tiges semi-conductrices

Publications (1)

Publication Number Publication Date
FR1410032A true FR1410032A (fr) 1965-09-03

Family

ID=26210246

Family Applications (1)

Application Number Title Priority Date Filing Date
FR989767A Expired FR1410032A (fr) 1963-09-30 1964-09-29 Procédé et appareil de stimulation pour tiges semi-conductrices

Country Status (1)

Country Link
FR (1) FR1410032A (fr)

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