FR1402172A - Photoemitter transistor system - Google Patents
Photoemitter transistor systemInfo
- Publication number
- FR1402172A FR1402172A FR975830A FR975830A FR1402172A FR 1402172 A FR1402172 A FR 1402172A FR 975830 A FR975830 A FR 975830A FR 975830 A FR975830 A FR 975830A FR 1402172 A FR1402172 A FR 1402172A
- Authority
- FR
- France
- Prior art keywords
- photoemitter
- transistor system
- transistor
- photoemitter transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR975830A FR1402172A (en) | 1963-05-27 | 1964-05-26 | Photoemitter transistor system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US283414A US3283207A (en) | 1963-05-27 | 1963-05-27 | Light-emitting transistor system |
FR975830A FR1402172A (en) | 1963-05-27 | 1964-05-26 | Photoemitter transistor system |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1402172A true FR1402172A (en) | 1965-06-11 |
Family
ID=26207878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR975830A Expired FR1402172A (en) | 1963-05-27 | 1964-05-26 | Photoemitter transistor system |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1402172A (en) |
-
1964
- 1964-05-26 FR FR975830A patent/FR1402172A/en not_active Expired
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