FR1394836A - Method of manufacturing crystalline devices - Google Patents
Method of manufacturing crystalline devicesInfo
- Publication number
- FR1394836A FR1394836A FR964304A FR964304A FR1394836A FR 1394836 A FR1394836 A FR 1394836A FR 964304 A FR964304 A FR 964304A FR 964304 A FR964304 A FR 964304A FR 1394836 A FR1394836 A FR 1394836A
- Authority
- FR
- France
- Prior art keywords
- manufacturing crystalline
- crystalline devices
- devices
- manufacturing
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR964304A FR1394836A (en) | 1963-02-20 | 1964-02-19 | Method of manufacturing crystalline devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US260020A US3341937A (en) | 1963-02-20 | 1963-02-20 | Crystalline injection laser device manufacture |
FR964304A FR1394836A (en) | 1963-02-20 | 1964-02-19 | Method of manufacturing crystalline devices |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1394836A true FR1394836A (en) | 1965-04-09 |
Family
ID=26205990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR964304A Expired FR1394836A (en) | 1963-02-20 | 1964-02-19 | Method of manufacturing crystalline devices |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1394836A (en) |
-
1964
- 1964-02-19 FR FR964304A patent/FR1394836A/en not_active Expired
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