FR1384966A - Transistron à base épitaxiale - Google Patents

Transistron à base épitaxiale

Info

Publication number
FR1384966A
FR1384966A FR959234A FR959234A FR1384966A FR 1384966 A FR1384966 A FR 1384966A FR 959234 A FR959234 A FR 959234A FR 959234 A FR959234 A FR 959234A FR 1384966 A FR1384966 A FR 1384966A
Authority
FR
France
Prior art keywords
transistron
epitaxial based
epitaxial
based transistron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR959234A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US252341A external-priority patent/US3275910A/en
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to FR959234A priority Critical patent/FR1384966A/fr
Application granted granted Critical
Publication of FR1384966A publication Critical patent/FR1384966A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
FR959234A 1963-01-18 1964-01-03 Transistron à base épitaxiale Expired FR1384966A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR959234A FR1384966A (fr) 1963-01-18 1964-01-03 Transistron à base épitaxiale

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US252341A US3275910A (en) 1963-01-18 1963-01-18 Planar transistor with a relative higher-resistivity base region
FR959234A FR1384966A (fr) 1963-01-18 1964-01-03 Transistron à base épitaxiale

Publications (1)

Publication Number Publication Date
FR1384966A true FR1384966A (fr) 1965-01-08

Family

ID=26205196

Family Applications (1)

Application Number Title Priority Date Filing Date
FR959234A Expired FR1384966A (fr) 1963-01-18 1964-01-03 Transistron à base épitaxiale

Country Status (1)

Country Link
FR (1) FR1384966A (fr)

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