FR1381894A - Low reflection loss photovoltaic device - Google Patents

Low reflection loss photovoltaic device

Info

Publication number
FR1381894A
FR1381894A FR962915A FR962915A FR1381894A FR 1381894 A FR1381894 A FR 1381894A FR 962915 A FR962915 A FR 962915A FR 962915 A FR962915 A FR 962915A FR 1381894 A FR1381894 A FR 1381894A
Authority
FR
France
Prior art keywords
photovoltaic device
low reflection
reflection loss
loss photovoltaic
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR962915A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of FR1381894A publication Critical patent/FR1381894A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
FR962915A 1963-02-06 1964-02-06 Low reflection loss photovoltaic device Expired FR1381894A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA751084T
US25676563A 1963-02-06 1963-02-06

Publications (1)

Publication Number Publication Date
FR1381894A true FR1381894A (en) 1964-12-14

Family

ID=74556602

Family Applications (1)

Application Number Title Priority Date Filing Date
FR962915A Expired FR1381894A (en) 1963-02-06 1964-02-06 Low reflection loss photovoltaic device

Country Status (3)

Country Link
JP (1) JPS4017537B1 (en)
CA (1) CA751084A (en)
FR (1) FR1381894A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106540A2 (en) * 1982-09-17 1984-04-25 Exxon Research And Engineering Company Thin film semi-conductor device with enhanced optical absorption properties, and method of making same
DE3343337A1 (en) * 1982-11-30 1984-05-30 Western Electric Co., Inc., New York, N.Y. PHOTODETECTOR

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053327A (en) * 1975-09-24 1977-10-11 Communications Satellite Corporation Light concentrating solar cell cover
US4131488A (en) * 1975-12-31 1978-12-26 Motorola, Inc. Method of semiconductor solar energy device fabrication
US4137123A (en) * 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
US4082570A (en) * 1976-02-09 1978-04-04 Semicon, Inc. High intensity solar energy converter
US4174561A (en) * 1976-02-09 1979-11-20 Semicon, Inc. Method of fabricating high intensity solar energy converter
US4252865A (en) * 1978-05-24 1981-02-24 National Patent Development Corporation Highly solar-energy absorbing device and method of making the same
US4348254A (en) * 1978-12-27 1982-09-07 Solarex Corporation Method of making solar cell
DE2951916A1 (en) * 1979-12-21 1981-07-02 Siemens AG, 1000 Berlin und 8000 München LIGHT CONTROLLED THYRISTOR

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106540A2 (en) * 1982-09-17 1984-04-25 Exxon Research And Engineering Company Thin film semi-conductor device with enhanced optical absorption properties, and method of making same
EP0106540A3 (en) * 1982-09-17 1985-06-05 Exxon Research And Engineering Company Thin film semi-conductor device with enhanced optical absorption properties, and method of making same
DE3343337A1 (en) * 1982-11-30 1984-05-30 Western Electric Co., Inc., New York, N.Y. PHOTODETECTOR

Also Published As

Publication number Publication date
CA751084A (en) 1967-01-17
JPS4017537B1 (en) 1965-08-09

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