FR1374335A - Dispositif pour fabriquer une lame en matériau à grande pureté - Google Patents

Dispositif pour fabriquer une lame en matériau à grande pureté

Info

Publication number
FR1374335A
FR1374335A FR918497A FR918497A FR1374335A FR 1374335 A FR1374335 A FR 1374335A FR 918497 A FR918497 A FR 918497A FR 918497 A FR918497 A FR 918497A FR 1374335 A FR1374335 A FR 1374335A
Authority
FR
France
Prior art keywords
blade
manufacturing
high purity
purity material
purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR918497A
Other languages
English (en)
Inventor
Claude Beauzee
Francois Desvignes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronique & Physique
Laboratoires dElectronique Philips SAS
Original Assignee
Electronique & Physique
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronique & Physique, Laboratoires dElectronique et de Physique Appliquee filed Critical Electronique & Physique
Priority to FR918497A priority Critical patent/FR1374335A/fr
Application granted granted Critical
Publication of FR1374335A publication Critical patent/FR1374335A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
FR918497A 1962-12-13 1962-12-13 Dispositif pour fabriquer une lame en matériau à grande pureté Expired FR1374335A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR918497A FR1374335A (fr) 1962-12-13 1962-12-13 Dispositif pour fabriquer une lame en matériau à grande pureté

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR918497A FR1374335A (fr) 1962-12-13 1962-12-13 Dispositif pour fabriquer une lame en matériau à grande pureté

Publications (1)

Publication Number Publication Date
FR1374335A true FR1374335A (fr) 1964-10-09

Family

ID=8792762

Family Applications (1)

Application Number Title Priority Date Filing Date
FR918497A Expired FR1374335A (fr) 1962-12-13 1962-12-13 Dispositif pour fabriquer une lame en matériau à grande pureté

Country Status (1)

Country Link
FR (1) FR1374335A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3394217A (en) * 1965-06-11 1968-07-23 Air Reduction Method and apparatus for controlling plural electron beams
EP0012838A1 (fr) * 1978-12-22 1980-07-09 International Business Machines Corporation Source ionique, spécialement pour installations d'implantation d'ions
EP0274283A1 (fr) * 1987-01-08 1988-07-13 Rhone-Poulenc Chimie Procédé de purification sous plasma de silicium divisé

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3394217A (en) * 1965-06-11 1968-07-23 Air Reduction Method and apparatus for controlling plural electron beams
EP0012838A1 (fr) * 1978-12-22 1980-07-09 International Business Machines Corporation Source ionique, spécialement pour installations d'implantation d'ions
EP0274283A1 (fr) * 1987-01-08 1988-07-13 Rhone-Poulenc Chimie Procédé de purification sous plasma de silicium divisé

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