FR1370638A - Process for refining gallium arsenide and device for carrying out this process - Google Patents

Process for refining gallium arsenide and device for carrying out this process

Info

Publication number
FR1370638A
FR1370638A FR935788A FR935788A FR1370638A FR 1370638 A FR1370638 A FR 1370638A FR 935788 A FR935788 A FR 935788A FR 935788 A FR935788 A FR 935788A FR 1370638 A FR1370638 A FR 1370638A
Authority
FR
France
Prior art keywords
carrying
gallium arsenide
refining gallium
refining
arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR935788A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to FR935788A priority Critical patent/FR1370638A/en
Application granted granted Critical
Publication of FR1370638A publication Critical patent/FR1370638A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
FR935788A 1963-05-22 1963-05-22 Process for refining gallium arsenide and device for carrying out this process Expired FR1370638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR935788A FR1370638A (en) 1963-05-22 1963-05-22 Process for refining gallium arsenide and device for carrying out this process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR935788A FR1370638A (en) 1963-05-22 1963-05-22 Process for refining gallium arsenide and device for carrying out this process

Publications (1)

Publication Number Publication Date
FR1370638A true FR1370638A (en) 1964-08-28

Family

ID=8804504

Family Applications (1)

Application Number Title Priority Date Filing Date
FR935788A Expired FR1370638A (en) 1963-05-22 1963-05-22 Process for refining gallium arsenide and device for carrying out this process

Country Status (1)

Country Link
FR (1) FR1370638A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0102054A1 (en) * 1982-08-27 1984-03-07 Zaidan Hojin Handotai Kenkyu Shinkokai Method for growing GaAs single crystal by using floating zone

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0102054A1 (en) * 1982-08-27 1984-03-07 Zaidan Hojin Handotai Kenkyu Shinkokai Method for growing GaAs single crystal by using floating zone

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