FR1370638A - Process for refining gallium arsenide and device for carrying out this process - Google Patents
Process for refining gallium arsenide and device for carrying out this processInfo
- Publication number
- FR1370638A FR1370638A FR935788A FR935788A FR1370638A FR 1370638 A FR1370638 A FR 1370638A FR 935788 A FR935788 A FR 935788A FR 935788 A FR935788 A FR 935788A FR 1370638 A FR1370638 A FR 1370638A
- Authority
- FR
- France
- Prior art keywords
- carrying
- gallium arsenide
- refining gallium
- refining
- arsenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR935788A FR1370638A (en) | 1963-05-22 | 1963-05-22 | Process for refining gallium arsenide and device for carrying out this process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR935788A FR1370638A (en) | 1963-05-22 | 1963-05-22 | Process for refining gallium arsenide and device for carrying out this process |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1370638A true FR1370638A (en) | 1964-08-28 |
Family
ID=8804504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR935788A Expired FR1370638A (en) | 1963-05-22 | 1963-05-22 | Process for refining gallium arsenide and device for carrying out this process |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1370638A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0102054A1 (en) * | 1982-08-27 | 1984-03-07 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method for growing GaAs single crystal by using floating zone |
-
1963
- 1963-05-22 FR FR935788A patent/FR1370638A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0102054A1 (en) * | 1982-08-27 | 1984-03-07 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method for growing GaAs single crystal by using floating zone |
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