FR1367068A - Dispositif à mémoire - Google Patents
Dispositif à mémoireInfo
- Publication number
- FR1367068A FR1367068A FR940773A FR940773A FR1367068A FR 1367068 A FR1367068 A FR 1367068A FR 940773 A FR940773 A FR 940773A FR 940773 A FR940773 A FR 940773A FR 1367068 A FR1367068 A FR 1367068A
- Authority
- FR
- France
- Prior art keywords
- memory device
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR940773A FR1367068A (fr) | 1962-07-11 | 1963-07-09 | Dispositif à mémoire |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US209163A US3189878A (en) | 1962-07-11 | 1962-07-11 | Negative resistance memory circuit |
FR940773A FR1367068A (fr) | 1962-07-11 | 1963-07-09 | Dispositif à mémoire |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1367068A true FR1367068A (fr) | 1964-07-17 |
Family
ID=26202288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR940773A Expired FR1367068A (fr) | 1962-07-11 | 1963-07-09 | Dispositif à mémoire |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1367068A (fr) |
-
1963
- 1963-07-09 FR FR940773A patent/FR1367068A/fr not_active Expired
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