FR1340208A - Process for the synthesis of compound semiconductor crystals and crystals obtained using this process - Google Patents

Process for the synthesis of compound semiconductor crystals and crystals obtained using this process

Info

Publication number
FR1340208A
FR1340208A FR903012A FR903012A FR1340208A FR 1340208 A FR1340208 A FR 1340208A FR 903012 A FR903012 A FR 903012A FR 903012 A FR903012 A FR 903012A FR 1340208 A FR1340208 A FR 1340208A
Authority
FR
France
Prior art keywords
crystals
synthesis
compound semiconductor
crystals obtained
semiconductor crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR903012A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US123406A external-priority patent/US3145125A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to FR903012A priority Critical patent/FR1340208A/en
Application granted granted Critical
Publication of FR1340208A publication Critical patent/FR1340208A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR903012A 1961-07-10 1962-07-05 Process for the synthesis of compound semiconductor crystals and crystals obtained using this process Expired FR1340208A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR903012A FR1340208A (en) 1961-07-10 1962-07-05 Process for the synthesis of compound semiconductor crystals and crystals obtained using this process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US123406A US3145125A (en) 1961-07-10 1961-07-10 Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions
FR903012A FR1340208A (en) 1961-07-10 1962-07-05 Process for the synthesis of compound semiconductor crystals and crystals obtained using this process

Publications (1)

Publication Number Publication Date
FR1340208A true FR1340208A (en) 1963-10-18

Family

ID=26196505

Family Applications (1)

Application Number Title Priority Date Filing Date
FR903012A Expired FR1340208A (en) 1961-07-10 1962-07-05 Process for the synthesis of compound semiconductor crystals and crystals obtained using this process

Country Status (1)

Country Link
FR (1) FR1340208A (en)

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