FR1338880A - Improvements to tunnel diode memories - Google Patents

Improvements to tunnel diode memories

Info

Publication number
FR1338880A
FR1338880A FR901740A FR901740A FR1338880A FR 1338880 A FR1338880 A FR 1338880A FR 901740 A FR901740 A FR 901740A FR 901740 A FR901740 A FR 901740A FR 1338880 A FR1338880 A FR 1338880A
Authority
FR
France
Prior art keywords
tunnel diode
memories
diode memories
tunnel
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR901740A
Other languages
French (fr)
Inventor
Andre Jacques Judeinstein
Jerzy Marek Tyszka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoire Central de Telecommunications SA
Original Assignee
Laboratoire Central de Telecommunications SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoire Central de Telecommunications SA filed Critical Laboratoire Central de Telecommunications SA
Priority to FR901740A priority Critical patent/FR1338880A/en
Application granted granted Critical
Publication of FR1338880A publication Critical patent/FR1338880A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
FR901740A 1962-06-23 1962-06-23 Improvements to tunnel diode memories Expired FR1338880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR901740A FR1338880A (en) 1962-06-23 1962-06-23 Improvements to tunnel diode memories

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR901740A FR1338880A (en) 1962-06-23 1962-06-23 Improvements to tunnel diode memories

Publications (1)

Publication Number Publication Date
FR1338880A true FR1338880A (en) 1963-10-04

Family

ID=8781709

Family Applications (1)

Application Number Title Priority Date Filing Date
FR901740A Expired FR1338880A (en) 1962-06-23 1962-06-23 Improvements to tunnel diode memories

Country Status (1)

Country Link
FR (1) FR1338880A (en)

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