FR1338306A - Method for depositing a semiconductor material - Google Patents

Method for depositing a semiconductor material

Info

Publication number
FR1338306A
FR1338306A FR863813A FR863813A FR1338306A FR 1338306 A FR1338306 A FR 1338306A FR 863813 A FR863813 A FR 863813A FR 863813 A FR863813 A FR 863813A FR 1338306 A FR1338306 A FR 1338306A
Authority
FR
France
Prior art keywords
depositing
semiconductor material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR863813A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES68807A external-priority patent/DE1123300B/en
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to FR863813A priority Critical patent/FR1338306A/en
Application granted granted Critical
Publication of FR1338306A publication Critical patent/FR1338306A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
FR863813A 1960-06-03 1961-06-02 Method for depositing a semiconductor material Expired FR1338306A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR863813A FR1338306A (en) 1960-06-03 1961-06-02 Method for depositing a semiconductor material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES68807A DE1123300B (en) 1960-06-03 1960-06-03 Process for the production of silicon or germanium
FR863813A FR1338306A (en) 1960-06-03 1961-06-02 Method for depositing a semiconductor material

Publications (1)

Publication Number Publication Date
FR1338306A true FR1338306A (en) 1963-09-27

Family

ID=25996100

Family Applications (1)

Application Number Title Priority Date Filing Date
FR863813A Expired FR1338306A (en) 1960-06-03 1961-06-02 Method for depositing a semiconductor material

Country Status (1)

Country Link
FR (1) FR1338306A (en)

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