FR1338019A - Corps semi-conducteurs monocristallins et leur procédé de fabrication - Google Patents
Corps semi-conducteurs monocristallins et leur procédé de fabricationInfo
- Publication number
- FR1338019A FR1338019A FR912158A FR912158A FR1338019A FR 1338019 A FR1338019 A FR 1338019A FR 912158 A FR912158 A FR 912158A FR 912158 A FR912158 A FR 912158A FR 1338019 A FR1338019 A FR 1338019A
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- monocrystalline semiconductor
- semiconductor bodies
- bodies
- monocrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14825361A | 1961-10-27 | 1961-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1338019A true FR1338019A (fr) | 1963-09-20 |
Family
ID=32041376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR912158A Expired FR1338019A (fr) | 1961-10-27 | 1962-10-12 | Corps semi-conducteurs monocristallins et leur procédé de fabrication |
Country Status (3)
| Country | Link |
|---|---|
| FR (1) | FR1338019A (enExample) |
| GB (1) | GB1010308A (enExample) |
| NL (1) | NL284785A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2109874A1 (de) * | 1970-03-02 | 1971-09-16 | Hitachi Ltd | Halbleitereinrichtung mit einem monokristallinen Siliziumkoerper |
| JPS4830707B1 (enExample) * | 1966-09-30 | 1973-09-22 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4050964A (en) * | 1975-12-01 | 1977-09-27 | Bell Telephone Laboratories, Incorporated | Growing smooth epitaxial layers on misoriented substrates |
-
0
- NL NL284785D patent/NL284785A/xx unknown
-
1962
- 1962-10-09 GB GB38221/62A patent/GB1010308A/en not_active Expired
- 1962-10-12 FR FR912158A patent/FR1338019A/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4830707B1 (enExample) * | 1966-09-30 | 1973-09-22 | ||
| DE2109874A1 (de) * | 1970-03-02 | 1971-09-16 | Hitachi Ltd | Halbleitereinrichtung mit einem monokristallinen Siliziumkoerper |
Also Published As
| Publication number | Publication date |
|---|---|
| NL284785A (enExample) | |
| GB1010308A (en) | 1965-11-17 |
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