FR1338019A - Corps semi-conducteurs monocristallins et leur procédé de fabrication - Google Patents

Corps semi-conducteurs monocristallins et leur procédé de fabrication

Info

Publication number
FR1338019A
FR1338019A FR912158A FR912158A FR1338019A FR 1338019 A FR1338019 A FR 1338019A FR 912158 A FR912158 A FR 912158A FR 912158 A FR912158 A FR 912158A FR 1338019 A FR1338019 A FR 1338019A
Authority
FR
France
Prior art keywords
manufacturing process
monocrystalline semiconductor
semiconductor bodies
bodies
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR912158A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck and Co Inc
Original Assignee
Merck and Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck and Co Inc filed Critical Merck and Co Inc
Application granted granted Critical
Publication of FR1338019A publication Critical patent/FR1338019A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures
    • H10D62/405Orientations of crystalline planes
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02433Crystal orientation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
FR912158A 1961-10-27 1962-10-12 Corps semi-conducteurs monocristallins et leur procédé de fabrication Expired FR1338019A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14825361A 1961-10-27 1961-10-27

Publications (1)

Publication Number Publication Date
FR1338019A true FR1338019A (fr) 1963-09-20

Family

ID=32041376

Family Applications (1)

Application Number Title Priority Date Filing Date
FR912158A Expired FR1338019A (fr) 1961-10-27 1962-10-12 Corps semi-conducteurs monocristallins et leur procédé de fabrication

Country Status (3)

Country Link
FR (1) FR1338019A (enrdf_load_stackoverflow)
GB (1) GB1010308A (enrdf_load_stackoverflow)
NL (1) NL284785A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109874A1 (de) * 1970-03-02 1971-09-16 Hitachi Ltd Halbleitereinrichtung mit einem monokristallinen Siliziumkoerper
JPS4830707B1 (enrdf_load_stackoverflow) * 1966-09-30 1973-09-22

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050964A (en) * 1975-12-01 1977-09-27 Bell Telephone Laboratories, Incorporated Growing smooth epitaxial layers on misoriented substrates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830707B1 (enrdf_load_stackoverflow) * 1966-09-30 1973-09-22
DE2109874A1 (de) * 1970-03-02 1971-09-16 Hitachi Ltd Halbleitereinrichtung mit einem monokristallinen Siliziumkoerper

Also Published As

Publication number Publication date
NL284785A (enrdf_load_stackoverflow)
GB1010308A (en) 1965-11-17

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