FR1333567A - Procédé de réduction du temps de retard de transistors à avalanche - Google Patents

Procédé de réduction du temps de retard de transistors à avalanche

Info

Publication number
FR1333567A
FR1333567A FR909498A FR909498A FR1333567A FR 1333567 A FR1333567 A FR 1333567A FR 909498 A FR909498 A FR 909498A FR 909498 A FR909498 A FR 909498A FR 1333567 A FR1333567 A FR 1333567A
Authority
FR
France
Prior art keywords
reducing
delay time
avalanche transistors
avalanche
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR909498A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Priority to FR909498A priority Critical patent/FR1333567A/fr
Application granted granted Critical
Publication of FR1333567A publication Critical patent/FR1333567A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR909498A 1961-10-31 1962-09-14 Procédé de réduction du temps de retard de transistors à avalanche Expired FR1333567A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR909498A FR1333567A (fr) 1961-10-31 1962-09-14 Procédé de réduction du temps de retard de transistors à avalanche

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14897861A 1961-10-31 1961-10-31
FR909498A FR1333567A (fr) 1961-10-31 1962-09-14 Procédé de réduction du temps de retard de transistors à avalanche

Publications (1)

Publication Number Publication Date
FR1333567A true FR1333567A (fr) 1963-07-26

Family

ID=26197541

Family Applications (1)

Application Number Title Priority Date Filing Date
FR909498A Expired FR1333567A (fr) 1961-10-31 1962-09-14 Procédé de réduction du temps de retard de transistors à avalanche

Country Status (1)

Country Link
FR (1) FR1333567A (fr)

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