FR1314874A - Procédé de fabrication de redresseurs - Google Patents

Procédé de fabrication de redresseurs

Info

Publication number
FR1314874A
FR1314874A FR887966A FR887966A FR1314874A FR 1314874 A FR1314874 A FR 1314874A FR 887966 A FR887966 A FR 887966A FR 887966 A FR887966 A FR 887966A FR 1314874 A FR1314874 A FR 1314874A
Authority
FR
France
Prior art keywords
manufacturing process
rectifier
rectifier manufacturing
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR887966A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to FR887966A priority Critical patent/FR1314874A/fr
Application granted granted Critical
Publication of FR1314874A publication Critical patent/FR1314874A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02425Conductive materials, e.g. metallic silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02658Pretreatments
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
FR887966A 1961-02-15 1962-02-14 Procédé de fabrication de redresseurs Expired FR1314874A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR887966A FR1314874A (fr) 1961-02-15 1962-02-14 Procédé de fabrication de redresseurs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB561661 1961-02-15
FR887966A FR1314874A (fr) 1961-02-15 1962-02-14 Procédé de fabrication de redresseurs

Publications (1)

Publication Number Publication Date
FR1314874A true FR1314874A (fr) 1963-01-11

Family

ID=26194358

Family Applications (1)

Application Number Title Priority Date Filing Date
FR887966A Expired FR1314874A (fr) 1961-02-15 1962-02-14 Procédé de fabrication de redresseurs

Country Status (1)

Country Link
FR (1) FR1314874A (fr)

Similar Documents

Publication Publication Date Title
BE625351A (fr) Procédé de fabrication de polyuréthanes
FR1306951A (fr) Procédé de fabrication de diamants
CH431986A (fr) Procédé de fabrication de polyesters
FR1509909A (fr) Procédé de fabrication de 3-hydroxy-benzisoxazoles
FR1512313A (fr) Procédé de fabrication de fluorostéroïdes
BE583990A (fr) Procédé de fabrication de borures
FR1344991A (fr) Procédé de fabrication de stratifiés
FR1314874A (fr) Procédé de fabrication de redresseurs
BE613920A (fr) Procédé de fabrication de redresseurs
FR1395525A (fr) Procédé de fabrication de nu, nu-dialcoyl-2-éthyl-3, 3-diphénylpropène-(2)-yl-amnes
CH398517A (fr) Procédé de fabrication de corindon
BE618421A (fr) Procédé de fabrication de semiconducteurs
FR1316609A (fr) Procédé de fabrication de coudes
FR1328912A (fr) Procédé de fabrication de coke
FR1369601A (fr) Procédé perfectionné de fabrication de semi-conducteurs
FR88648E (fr) Procédé de fabrication de vannes
FR1299837A (fr) Procédé de fabrication de fer-blanc
FR1377007A (fr) Procédé de fabrication de 1, 8-dihydroxy-anthraquinonyl-5-thioéthers
FR1285081A (fr) Procédé de fabrication de paliers
FR1280507A (fr) Procédé de fabrication de semi-conducteurs
FR1279062A (fr) Procédé de fabrication de stratifiés
FR1358120A (fr) Procédé de fabrication de fluorochlorobenzènes
FR1295199A (fr) Procédé de fabrication de pipérazines
FR80941E (fr) Procédé de fabrication de dialkylhydrazines asymétriques
FR1313574A (fr) Procédé de fabrication de méthylacrylate