FR1304894A - Procédé de dopage pour la fabrication de matériaux semi-conducteurs dégénérés - Google Patents
Procédé de dopage pour la fabrication de matériaux semi-conducteurs dégénérésInfo
- Publication number
- FR1304894A FR1304894A FR877695A FR877695A FR1304894A FR 1304894 A FR1304894 A FR 1304894A FR 877695 A FR877695 A FR 877695A FR 877695 A FR877695 A FR 877695A FR 1304894 A FR1304894 A FR 1304894A
- Authority
- FR
- France
- Prior art keywords
- production
- semiconductor materials
- doping process
- degenerated semiconductor
- degenerated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR877695A FR1304894A (fr) | 1960-11-04 | 1961-11-02 | Procédé de dopage pour la fabrication de matériaux semi-conducteurs dégénérés |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67400A US3145123A (en) | 1960-11-04 | 1960-11-04 | Degenerate doping of semiconductor materials |
FR877695A FR1304894A (fr) | 1960-11-04 | 1961-11-02 | Procédé de dopage pour la fabrication de matériaux semi-conducteurs dégénérés |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1304894A true FR1304894A (fr) | 1962-09-28 |
Family
ID=26192927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR877695A Expired FR1304894A (fr) | 1960-11-04 | 1961-11-02 | Procédé de dopage pour la fabrication de matériaux semi-conducteurs dégénérés |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1304894A (fr) |
-
1961
- 1961-11-02 FR FR877695A patent/FR1304894A/fr not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1141561A (fr) | Procédé et moyens pour la fabrication de matériaux semi-conducteurs | |
FR1401011A (fr) | Procédé pour la fabrication de surfaces pures de corps semi-conducteurs | |
FR1174076A (fr) | Procédé pour la fabrication de corps semi-conducteurs | |
FR1166980A (fr) | Procédé pour la fabrication de matériaux légers | |
FR1304894A (fr) | Procédé de dopage pour la fabrication de matériaux semi-conducteurs dégénérés | |
BE589911A (fr) | Procédé pour la fabrication de matière semi-conductrice monocristalline | |
FR1201470A (fr) | Procédé pour réduire la perméabilité de matériaux | |
FR1269229A (fr) | Procédé pour la fabrication de tamis | |
FR1178317A (fr) | Procédé de fabrication de matériaux semi-conducteurs | |
FR1284907A (fr) | Procédé pour la fabrication de garnitures pour emballage | |
BE609019A (fr) | Procédé de fabrication de tubes en matières très pures | |
FR1268153A (fr) | Procédé pour la fabrication de récipients améliorés | |
FR1166282A (fr) | Procédé de fabrication d'éléments semi-conducteurs | |
FR1209120A (fr) | Procédé pour la fabrication de substances tensio-actives | |
FR1207527A (fr) | Procédé pour la fabrication de cristaux semi-conducteurs de grande dimension | |
CH405255A (fr) | Procédé pour la fabrication de terphényles | |
FR1290458A (fr) | Procédé de fabrication de matériaux thermoélectriques frittés | |
FR1204235A (fr) | Procédé pour la fabrication de résines poreuses solides | |
BE585797A (fr) | Procédé pour la fabrication de matières luminescentes | |
FR1253624A (fr) | Procédé de préparation de matières à grain fin pour la fabrication de matériaux de construction | |
FR1250930A (fr) | Procédé pour la fabrication de cyclo-dodécatriènes-(1, 5, 9) | |
FR1279678A (fr) | Procédé pour la fabrication de films titano-céramiques | |
BE609925A (fr) | Procédé pour la fabrication de pigmentaires | |
FR1207890A (fr) | Procédé de fabrication d'emballages | |
BE602064R (fr) | Procédé pour la dotation de matières semi-conductrice |