FR1297973A - Method of doping, for example of semiconductor bodies - Google Patents

Method of doping, for example of semiconductor bodies

Info

Publication number
FR1297973A
FR1297973A FR865925A FR865925A FR1297973A FR 1297973 A FR1297973 A FR 1297973A FR 865925 A FR865925 A FR 865925A FR 865925 A FR865925 A FR 865925A FR 1297973 A FR1297973 A FR 1297973A
Authority
FR
France
Prior art keywords
doping
semiconductor bodies
bodies
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR865925A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Priority to FR865925A priority Critical patent/FR1297973A/en
Application granted granted Critical
Publication of FR1297973A publication Critical patent/FR1297973A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR865925A 1960-07-04 1961-06-23 Method of doping, for example of semiconductor bodies Expired FR1297973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR865925A FR1297973A (en) 1960-07-04 1961-06-23 Method of doping, for example of semiconductor bodies

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEW0028137 1960-07-04
FR865925A FR1297973A (en) 1960-07-04 1961-06-23 Method of doping, for example of semiconductor bodies

Publications (1)

Publication Number Publication Date
FR1297973A true FR1297973A (en) 1962-07-06

Family

ID=26002370

Family Applications (1)

Application Number Title Priority Date Filing Date
FR865925A Expired FR1297973A (en) 1960-07-04 1961-06-23 Method of doping, for example of semiconductor bodies

Country Status (1)

Country Link
FR (1) FR1297973A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2321938A1 (en) * 1975-09-01 1977-03-25 Wacker Chemitronic SEMICONDUCTOR BAR DOPING PROCESS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2321938A1 (en) * 1975-09-01 1977-03-25 Wacker Chemitronic SEMICONDUCTOR BAR DOPING PROCESS

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