FR1289182A - High frequency transistor - Google Patents

High frequency transistor

Info

Publication number
FR1289182A
FR1289182A FR861572A FR861572A FR1289182A FR 1289182 A FR1289182 A FR 1289182A FR 861572 A FR861572 A FR 861572A FR 861572 A FR861572 A FR 861572A FR 1289182 A FR1289182 A FR 1289182A
Authority
FR
France
Prior art keywords
high frequency
frequency transistor
transistor
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR861572A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL264120D priority Critical patent/NL264120A/xx
Priority to BE603803D priority patent/BE603803A/fr
Application filed by Raytheon Co filed Critical Raytheon Co
Priority to DER30322A priority patent/DE1166379B/en
Priority to FR861572A priority patent/FR1289182A/en
Application granted granted Critical
Publication of FR1289182A publication Critical patent/FR1289182A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR861572A 1961-05-12 1961-05-12 High frequency transistor Expired FR1289182A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL264120D NL264120A (en) 1961-05-12
BE603803D BE603803A (en) 1961-05-12
DER30322A DE1166379B (en) 1961-05-12 1961-05-12 High frequency transistor and process for its manufacture
FR861572A FR1289182A (en) 1961-05-12 1961-05-12 High frequency transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR861572A FR1289182A (en) 1961-05-12 1961-05-12 High frequency transistor

Publications (1)

Publication Number Publication Date
FR1289182A true FR1289182A (en) 1962-03-30

Family

ID=8755009

Family Applications (1)

Application Number Title Priority Date Filing Date
FR861572A Expired FR1289182A (en) 1961-05-12 1961-05-12 High frequency transistor

Country Status (3)

Country Link
BE (1) BE603803A (en)
FR (1) FR1289182A (en)
NL (1) NL264120A (en)

Also Published As

Publication number Publication date
BE603803A (en)
NL264120A (en)

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