FR1288168A - Improvements to transistors with joint space charges - Google Patents

Improvements to transistors with joint space charges

Info

Publication number
FR1288168A
FR1288168A FR852075A FR852075A FR1288168A FR 1288168 A FR1288168 A FR 1288168A FR 852075 A FR852075 A FR 852075A FR 852075 A FR852075 A FR 852075A FR 1288168 A FR1288168 A FR 1288168A
Authority
FR
France
Prior art keywords
transistors
joint space
space charges
charges
joint
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR852075A
Other languages
French (fr)
Inventor
Marc Chappey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to FR852075A priority Critical patent/FR1288168A/en
Application granted granted Critical
Publication of FR1288168A publication Critical patent/FR1288168A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR852075A 1961-02-08 1961-02-08 Improvements to transistors with joint space charges Expired FR1288168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR852075A FR1288168A (en) 1961-02-08 1961-02-08 Improvements to transistors with joint space charges

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR852075A FR1288168A (en) 1961-02-08 1961-02-08 Improvements to transistors with joint space charges

Publications (1)

Publication Number Publication Date
FR1288168A true FR1288168A (en) 1962-03-24

Family

ID=8748401

Family Applications (1)

Application Number Title Priority Date Filing Date
FR852075A Expired FR1288168A (en) 1961-02-08 1961-02-08 Improvements to transistors with joint space charges

Country Status (1)

Country Link
FR (1) FR1288168A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1295094B (en) * 1962-08-23 1969-05-14 Motorola Inc Semiconductor component
FR2119942A1 (en) * 1970-11-30 1972-08-11 Matsushita Electric Ind Co Ltd

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1295094B (en) * 1962-08-23 1969-05-14 Motorola Inc Semiconductor component
FR2119942A1 (en) * 1970-11-30 1972-08-11 Matsushita Electric Ind Co Ltd

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