FR1279792A - Transistor composite - Google Patents
Transistor compositeInfo
- Publication number
- FR1279792A FR1279792A FR851258A FR851258A FR1279792A FR 1279792 A FR1279792 A FR 1279792A FR 851258 A FR851258 A FR 851258A FR 851258 A FR851258 A FR 851258A FR 1279792 A FR1279792 A FR 1279792A
- Authority
- FR
- France
- Prior art keywords
- composite transistor
- transistor
- composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR851258A FR1279792A (fr) | 1960-02-08 | 1961-01-31 | Transistor composite |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7193A US2985804A (en) | 1960-02-08 | 1960-02-08 | Compound transistor |
FR851258A FR1279792A (fr) | 1960-02-08 | 1961-01-31 | Transistor composite |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1279792A true FR1279792A (fr) | 1961-12-22 |
Family
ID=26189131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR851258A Expired FR1279792A (fr) | 1960-02-08 | 1961-01-31 | Transistor composite |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1279792A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1234326B (de) * | 1963-08-03 | 1967-02-16 | Siemens Ag | Steuerbarer Gleichrichter mit einem einkristallinen Halbleiterkoerper und mit vier Zonen abwechselnd entgegengesetzten Leitungstyps |
DE1292758B (de) * | 1962-04-16 | 1969-04-17 | Itt Ind Gmbh Deutsche | Elektrisches Halbleiterbauelement |
EP2190015A1 (fr) * | 2007-09-12 | 2010-05-26 | Aisin Seiki Kabushiki Kaisha | Puce de semi-conducteur de puissance, module semi-conducteur de puissance, dispositif onduleur et moteur du type à onduleur intégré |
-
1961
- 1961-01-31 FR FR851258A patent/FR1279792A/fr not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1292758B (de) * | 1962-04-16 | 1969-04-17 | Itt Ind Gmbh Deutsche | Elektrisches Halbleiterbauelement |
DE1234326B (de) * | 1963-08-03 | 1967-02-16 | Siemens Ag | Steuerbarer Gleichrichter mit einem einkristallinen Halbleiterkoerper und mit vier Zonen abwechselnd entgegengesetzten Leitungstyps |
EP2190015A1 (fr) * | 2007-09-12 | 2010-05-26 | Aisin Seiki Kabushiki Kaisha | Puce de semi-conducteur de puissance, module semi-conducteur de puissance, dispositif onduleur et moteur du type à onduleur intégré |
EP2190015A4 (fr) * | 2007-09-12 | 2015-04-22 | Aisin Seiki | Puce de semi-conducteur de puissance, module semi-conducteur de puissance, dispositif onduleur et moteur du type à onduleur intégré |
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