FR1279792A - Transistor composite - Google Patents

Transistor composite

Info

Publication number
FR1279792A
FR1279792A FR851258A FR851258A FR1279792A FR 1279792 A FR1279792 A FR 1279792A FR 851258 A FR851258 A FR 851258A FR 851258 A FR851258 A FR 851258A FR 1279792 A FR1279792 A FR 1279792A
Authority
FR
France
Prior art keywords
composite transistor
transistor
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR851258A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pacific Semiconductors Inc
Original Assignee
Pacific Semiconductors Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US7193A external-priority patent/US2985804A/en
Application filed by Pacific Semiconductors Inc filed Critical Pacific Semiconductors Inc
Priority to FR851258A priority Critical patent/FR1279792A/fr
Application granted granted Critical
Publication of FR1279792A publication Critical patent/FR1279792A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
FR851258A 1960-02-08 1961-01-31 Transistor composite Expired FR1279792A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR851258A FR1279792A (fr) 1960-02-08 1961-01-31 Transistor composite

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7193A US2985804A (en) 1960-02-08 1960-02-08 Compound transistor
FR851258A FR1279792A (fr) 1960-02-08 1961-01-31 Transistor composite

Publications (1)

Publication Number Publication Date
FR1279792A true FR1279792A (fr) 1961-12-22

Family

ID=26189131

Family Applications (1)

Application Number Title Priority Date Filing Date
FR851258A Expired FR1279792A (fr) 1960-02-08 1961-01-31 Transistor composite

Country Status (1)

Country Link
FR (1) FR1279792A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1234326B (de) * 1963-08-03 1967-02-16 Siemens Ag Steuerbarer Gleichrichter mit einem einkristallinen Halbleiterkoerper und mit vier Zonen abwechselnd entgegengesetzten Leitungstyps
DE1292758B (de) * 1962-04-16 1969-04-17 Itt Ind Gmbh Deutsche Elektrisches Halbleiterbauelement
EP2190015A1 (fr) * 2007-09-12 2010-05-26 Aisin Seiki Kabushiki Kaisha Puce de semi-conducteur de puissance, module semi-conducteur de puissance, dispositif onduleur et moteur du type à onduleur intégré

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1292758B (de) * 1962-04-16 1969-04-17 Itt Ind Gmbh Deutsche Elektrisches Halbleiterbauelement
DE1234326B (de) * 1963-08-03 1967-02-16 Siemens Ag Steuerbarer Gleichrichter mit einem einkristallinen Halbleiterkoerper und mit vier Zonen abwechselnd entgegengesetzten Leitungstyps
EP2190015A1 (fr) * 2007-09-12 2010-05-26 Aisin Seiki Kabushiki Kaisha Puce de semi-conducteur de puissance, module semi-conducteur de puissance, dispositif onduleur et moteur du type à onduleur intégré
EP2190015A4 (fr) * 2007-09-12 2015-04-22 Aisin Seiki Puce de semi-conducteur de puissance, module semi-conducteur de puissance, dispositif onduleur et moteur du type à onduleur intégré

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