FR1275751A - Transistor that can be used in particular as a switch - Google Patents

Transistor that can be used in particular as a switch

Info

Publication number
FR1275751A
FR1275751A FR846221A FR846221A FR1275751A FR 1275751 A FR1275751 A FR 1275751A FR 846221 A FR846221 A FR 846221A FR 846221 A FR846221 A FR 846221A FR 1275751 A FR1275751 A FR 1275751A
Authority
FR
France
Prior art keywords
transistor
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR846221A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES66142A external-priority patent/DE1188732B/en
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Priority to FR846221A priority Critical patent/FR1275751A/en
Application granted granted Critical
Publication of FR1275751A publication Critical patent/FR1275751A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/042Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/0422Anti-saturation measures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
FR846221A 1959-12-07 1960-12-07 Transistor that can be used in particular as a switch Expired FR1275751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR846221A FR1275751A (en) 1959-12-07 1960-12-07 Transistor that can be used in particular as a switch

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES66142A DE1188732B (en) 1959-12-07 1959-12-07 Transistor, in particular for use as a switch
FR846221A FR1275751A (en) 1959-12-07 1960-12-07 Transistor that can be used in particular as a switch

Publications (1)

Publication Number Publication Date
FR1275751A true FR1275751A (en) 1961-11-10

Family

ID=25995923

Family Applications (1)

Application Number Title Priority Date Filing Date
FR846221A Expired FR1275751A (en) 1959-12-07 1960-12-07 Transistor that can be used in particular as a switch

Country Status (1)

Country Link
FR (1) FR1275751A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1279120B (en) * 1963-09-24 1968-10-03 R U E Hopt K G Circuit for frequency stabilization of a transistor oscillator and transistor for this

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1279120B (en) * 1963-09-24 1968-10-03 R U E Hopt K G Circuit for frequency stabilization of a transistor oscillator and transistor for this

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