FR1264134A - Dispositif semi-conducteur de transfert de signaux - Google Patents

Dispositif semi-conducteur de transfert de signaux

Info

Publication number
FR1264134A
FR1264134A FR830282A FR830282A FR1264134A FR 1264134 A FR1264134 A FR 1264134A FR 830282 A FR830282 A FR 830282A FR 830282 A FR830282 A FR 830282A FR 1264134 A FR1264134 A FR 1264134A
Authority
FR
France
Prior art keywords
transfer device
signal transfer
semiconductor signal
semiconductor
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR830282A
Other languages
English (en)
French (fr)
Inventor
Melvin Klein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1264134A publication Critical patent/FR1264134A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Electronic Switches (AREA)
FR830282A 1959-06-23 1960-06-17 Dispositif semi-conducteur de transfert de signaux Expired FR1264134A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US822385A US3241012A (en) 1959-06-23 1959-06-23 Semiconductor signal-translating device
US25385A US3211971A (en) 1959-06-23 1960-04-28 Pnpn semiconductor translating device and method of construction

Publications (1)

Publication Number Publication Date
FR1264134A true FR1264134A (fr) 1961-06-19

Family

ID=26699677

Family Applications (2)

Application Number Title Priority Date Filing Date
FR830282A Expired FR1264134A (fr) 1959-06-23 1960-06-17 Dispositif semi-conducteur de transfert de signaux
FR859891A Expired FR80156E (fr) 1959-06-23 1961-04-26 Dispositif semi-conducteur de transfert de signaux

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR859891A Expired FR80156E (fr) 1959-06-23 1961-04-26 Dispositif semi-conducteur de transfert de signaux

Country Status (5)

Country Link
US (2) US3241012A (US07122603-20061017-C00045.png)
DE (2) DE1171534B (US07122603-20061017-C00045.png)
FR (2) FR1264134A (US07122603-20061017-C00045.png)
GB (2) GB917645A (US07122603-20061017-C00045.png)
NL (2) NL252855A (US07122603-20061017-C00045.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1213925B (de) * 1963-02-26 1966-04-07 Siemens Ag Halbleiterbauelement mit teilweise negativer Stromspannungscharakteristik und einem Halbleiterkoerper mit vier Zonen sowie Verfahren zum Herstellen

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL290680A (US07122603-20061017-C00045.png) * 1962-06-19
US3319311A (en) * 1963-05-24 1967-05-16 Ibm Semiconductor devices and their fabrication
US3324359A (en) * 1963-09-30 1967-06-06 Gen Electric Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction
US3500133A (en) * 1964-01-21 1970-03-10 Danfoss As Electrically controlled switch and switching arrangement
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
US3341749A (en) * 1964-08-10 1967-09-12 Ass Elect Ind Four layer semiconductor devices with improved high voltage characteristics
US5445974A (en) * 1993-03-31 1995-08-29 Siemens Components, Inc. Method of fabricating a high-voltage, vertical-trench semiconductor device
RU2433282C2 (ru) 2010-05-07 2011-11-10 Владимир Петрович Севастьянов Способ псевдодетонационной газификации угольной суспензии в комбинированном цикле "icsgcc"

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2756285A (en) * 1951-08-24 1956-07-24 Bell Telephone Labor Inc Semiconductor signal translating devices
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
DE1048359B (US07122603-20061017-C00045.png) * 1952-07-22
US2663830A (en) * 1952-10-22 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
BE525280A (US07122603-20061017-C00045.png) * 1952-12-31 1900-01-01
US2838617A (en) * 1953-01-13 1958-06-10 Philips Corp Circuit-arrangement comprising a four-zone transistor
BE529698A (US07122603-20061017-C00045.png) * 1953-06-19
NL105840C (US07122603-20061017-C00045.png) * 1953-10-24
NL201235A (US07122603-20061017-C00045.png) * 1954-10-18
US2895109A (en) * 1955-06-20 1959-07-14 Bell Telephone Labor Inc Negative resistance semiconductive element
US2981849A (en) * 1956-01-09 1961-04-25 Itt Semiconductor diode
US2877359A (en) * 1956-04-20 1959-03-10 Bell Telephone Labor Inc Semiconductor signal storage device
US2989426A (en) * 1957-06-06 1961-06-20 Ibm Method of transistor manufacture
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same
US2900286A (en) * 1957-11-19 1959-08-18 Rca Corp Method of manufacturing semiconductive bodies
NL121250C (US07122603-20061017-C00045.png) * 1958-01-16
FR1193093A (fr) * 1958-03-06 1959-10-30 Csf Procédé de réalisation de jonctions i-n ou i-p
NL239104A (US07122603-20061017-C00045.png) * 1958-05-26 1900-01-01 Western Electric Co

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1213925B (de) * 1963-02-26 1966-04-07 Siemens Ag Halbleiterbauelement mit teilweise negativer Stromspannungscharakteristik und einem Halbleiterkoerper mit vier Zonen sowie Verfahren zum Herstellen

Also Published As

Publication number Publication date
NL252855A (US07122603-20061017-C00045.png)
US3211971A (en) 1965-10-12
GB917645A (en) 1963-02-06
US3241012A (en) 1966-03-15
GB917646A (en) 1963-02-06
DE1171534B (de) 1964-06-04
NL264084A (US07122603-20061017-C00045.png)
DE1194061B (de) 1965-06-03
FR80156E (fr) 1963-03-22

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