FR1262795A - Amplificateur paramétrique - Google Patents

Amplificateur paramétrique

Info

Publication number
FR1262795A
FR1262795A FR829729A FR829729A FR1262795A FR 1262795 A FR1262795 A FR 1262795A FR 829729 A FR829729 A FR 829729A FR 829729 A FR829729 A FR 829729A FR 1262795 A FR1262795 A FR 1262795A
Authority
FR
France
Prior art keywords
parametric amplifier
parametric
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR829729A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1262795A publication Critical patent/FR1262795A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F7/00—Parametric amplifiers
    • H03F7/04—Parametric amplifiers using variable-capacitance element; using variable-permittivity element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F7/00—Parametric amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR829729A 1959-06-12 1960-06-11 Amplificateur paramétrique Expired FR1262795A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US819923A US3094671A (en) 1959-06-12 1959-06-12 Field effect parametric amplifier

Publications (1)

Publication Number Publication Date
FR1262795A true FR1262795A (fr) 1961-06-05

Family

ID=25229449

Family Applications (1)

Application Number Title Priority Date Filing Date
FR829729A Expired FR1262795A (fr) 1959-06-12 1960-06-11 Amplificateur paramétrique

Country Status (6)

Country Link
US (1) US3094671A (US08080257-20111220-C00005.png)
BE (1) BE588588A (US08080257-20111220-C00005.png)
DE (1) DE1416458A1 (US08080257-20111220-C00005.png)
FR (1) FR1262795A (US08080257-20111220-C00005.png)
GB (1) GB948058A (US08080257-20111220-C00005.png)
NL (1) NL252543A (US08080257-20111220-C00005.png)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3288656A (en) * 1961-07-26 1966-11-29 Nippon Electric Co Semiconductor device
NL282849A (US08080257-20111220-C00005.png) * 1961-09-11
US3177435A (en) * 1962-09-21 1965-04-06 Bell Telephone Labor Inc Amplification by the stimulated emission of bremsstrahlung
US3289054A (en) * 1963-12-26 1966-11-29 Ibm Thin film transistor and method of fabrication
US3479571A (en) * 1966-09-28 1969-11-18 Nippon Electric Co Field effect semiconductor device
US3863167A (en) * 1972-07-08 1975-01-28 Licentia Gmbh Parametric moving field amplifier
DE10118541A1 (de) * 2001-04-14 2002-10-17 Alstom Switzerland Ltd Verfahren zur Abschätzung der Lebensdauer von Wärmedämmschichten
RU2511948C1 (ru) * 2013-02-27 2014-04-10 Общество С Ограниченной Ответственностью "Твинн" Тепловой диод
US10158030B2 (en) * 2017-02-13 2018-12-18 Qualcomm Incorporated CMOS and bipolar device integration including a tunable capacitor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE517808A (US08080257-20111220-C00005.png) * 1952-03-14
US2773250A (en) * 1953-05-13 1956-12-04 Int Standard Electric Corp Device for storing information
US2791759A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive device
US2864953A (en) * 1956-10-31 1958-12-16 Bell Telephone Labor Inc Microwave pulse circuits
US2970275A (en) * 1959-05-05 1961-01-31 Rca Corp Parametric amplifier device

Also Published As

Publication number Publication date
GB948058A (en) 1964-01-29
NL252543A (US08080257-20111220-C00005.png)
DE1416458A1 (de) 1969-03-06
US3094671A (en) 1963-06-18
BE588588A (fr) 1960-07-01

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