FR1196187A - advanced photoconductive elements - Google Patents
advanced photoconductive elementsInfo
- Publication number
- FR1196187A FR1196187A FR1196187DA FR1196187A FR 1196187 A FR1196187 A FR 1196187A FR 1196187D A FR1196187D A FR 1196187DA FR 1196187 A FR1196187 A FR 1196187A
- Authority
- FR
- France
- Prior art keywords
- photoconductive elements
- advanced
- advanced photoconductive
- elements
- photoconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2258—Diffusion into or out of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1196187T | 1958-05-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1196187A true FR1196187A (en) | 1959-11-23 |
Family
ID=9669110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1196187D Expired FR1196187A (en) | 1958-05-17 | 1958-05-17 | advanced photoconductive elements |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1196187A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2512590A1 (en) * | 1981-09-10 | 1983-03-11 | Mitsubishi Electric Corp | JUNCTION TYPE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD |
-
1958
- 1958-05-17 FR FR1196187D patent/FR1196187A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2512590A1 (en) * | 1981-09-10 | 1983-03-11 | Mitsubishi Electric Corp | JUNCTION TYPE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD |
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