FR1196081A - Perfectionnement aux machines de tirage des cristaux de semi-conducteur - Google Patents

Perfectionnement aux machines de tirage des cristaux de semi-conducteur

Info

Publication number
FR1196081A
FR1196081A FR1196081DA FR1196081A FR 1196081 A FR1196081 A FR 1196081A FR 1196081D A FR1196081D A FR 1196081DA FR 1196081 A FR1196081 A FR 1196081A
Authority
FR
France
Prior art keywords
semiconductor crystal
printing machines
advanced training
crystal printing
training
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Inventor
Rene Deschamps
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Application granted granted Critical
Publication of FR1196081A publication Critical patent/FR1196081A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR1196081D 1958-05-10 1958-05-10 Perfectionnement aux machines de tirage des cristaux de semi-conducteur Expired FR1196081A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1196081T 1958-05-10

Publications (1)

Publication Number Publication Date
FR1196081A true FR1196081A (fr) 1959-11-20

Family

ID=9669007

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1196081D Expired FR1196081A (fr) 1958-05-10 1958-05-10 Perfectionnement aux machines de tirage des cristaux de semi-conducteur

Country Status (1)

Country Link
FR (1) FR1196081A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0798403A1 (fr) * 1996-03-27 1997-10-01 Shin-Etsu Handotai Company Limited Méthode czochralski à rechargement continu pour la production de monocristaux de silicium et appareillage pour l'alimentation de dopant

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0798403A1 (fr) * 1996-03-27 1997-10-01 Shin-Etsu Handotai Company Limited Méthode czochralski à rechargement continu pour la production de monocristaux de silicium et appareillage pour l'alimentation de dopant
US5900055A (en) * 1996-03-27 1999-05-04 Shin-Etsu Handotai Co., Ltd. Method of manufacturing silicon monocrystal by continuously charged Czochralski method

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