FR1191993A - Procédé pour la fabrication d'un transistor p-n-p-n et transistor conforme à celui obtenu - Google Patents

Procédé pour la fabrication d'un transistor p-n-p-n et transistor conforme à celui obtenu

Info

Publication number
FR1191993A
FR1191993A FR1191993DA FR1191993A FR 1191993 A FR1191993 A FR 1191993A FR 1191993D A FR1191993D A FR 1191993DA FR 1191993 A FR1191993 A FR 1191993A
Authority
FR
France
Prior art keywords
transistor
manufacture
accordance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1191993A publication Critical patent/FR1191993A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
FR1191993D 1957-02-26 1958-02-26 Procédé pour la fabrication d'un transistor p-n-p-n et transistor conforme à celui obtenu Expired FR1191993A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES52496A DE1117220B (de) 1957-02-26 1957-02-26 Verfahren zur Herstellung von pnpn-Transistoren

Publications (1)

Publication Number Publication Date
FR1191993A true FR1191993A (fr) 1959-10-22

Family

ID=7488765

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1191993D Expired FR1191993A (fr) 1957-02-26 1958-02-26 Procédé pour la fabrication d'un transistor p-n-p-n et transistor conforme à celui obtenu

Country Status (4)

Country Link
CH (1) CH362749A (fr)
DE (1) DE1117220B (fr)
FR (1) FR1191993A (fr)
NL (2) NL112062C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1292255B (de) * 1960-12-20 1969-04-10 Merck & Co Inc Halbleiterbauelement mit vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1292255B (de) * 1960-12-20 1969-04-10 Merck & Co Inc Halbleiterbauelement mit vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps

Also Published As

Publication number Publication date
NL112062C (fr)
CH362749A (de) 1962-06-30
DE1117220B (de) 1961-11-16
NL225050A (fr)

Similar Documents

Publication Publication Date Title
FR1134907A (fr) Procédé pour la fabrication d'alcools
FR1191993A (fr) Procédé pour la fabrication d'un transistor p-n-p-n et transistor conforme à celui obtenu
FR1227934A (fr) Procédé pour la fabrication d'un transistor et transistor fabriqué suivant ledit procédé
CH380084A (fr) Fiche d'enregistrement et procédé pour sa fabrication
FR1171277A (fr) Procédé pour la fabrication d'un papier d'enregistrement et papier d'enregistrement conforme à celui obtenu
FR1286559A (fr) Procédé et dispositif pour la fabrication d'un condensateur autorégénérant et condensateur conforme à celui ainsi obtenu
FR1186472A (fr) Procédé de fabrication d'un transistor à diffusion et transistor conforme à celui obtenu
FR1211122A (fr) Structure composée moulée et procédé pour sa fabrication
FR1208444A (fr) Procédé de production d'acroléine
FR1195806A (fr) Procédé de fabrication d'alumines hydratées et d'alumines
BE576404A (fr) Procédé pour la fabrication d'articles creux et articles ainsi obtenus.
FR1206096A (fr) Procédé d'étirage
BE611811A (fr) 4-(Pyridoylamido-acylamino)-1-phényl-2,3-diméthyl-pyrazolone-(5) et procédé pour sa fabrication
FR1205976A (fr) Perfectionnement à la fabrication d'élastomères synthétiques
BE591967A (fr) Procédé pour la fabrication d'acides 2-nitro-4-fluorobenzoïques et 4-nitro-2-fluorobenzoïques.
FR1178328A (fr) Procédé pour la fabrication d'oxyde magnétique et oxyde magnétique ainsi obtenu, plus spécialement pour mémoires magnétiques
FR1203754A (fr) Procédé pour la fabrication d'isoprène
FR1307579A (fr) Procédé pour la fabrication d'un condensateur à feuille mince et condensateur conforme à celui ainsi obtenu
FR1187013A (fr) Machine à extruder et procédé d'extrudage
FR1144265A (fr) Procédé de fabrication d'alcynols et d'alcynediols
FR1186960A (fr) Nouveau procédé de fabrication d'aldéhydes
CH347508A (fr) Procédé d'enrichissement isotopique
FR1192212A (fr) Tapis et procédé pour sa fabrication
FR1185069A (fr) Procédé de fabrication d'étuis déformables et machine correspondante
FR1207890A (fr) Procédé de fabrication d'emballages