FR1164844A - Structure semi-conductrice - Google Patents

Structure semi-conductrice

Info

Publication number
FR1164844A
FR1164844A FR1164844DA FR1164844A FR 1164844 A FR1164844 A FR 1164844A FR 1164844D A FR1164844D A FR 1164844DA FR 1164844 A FR1164844 A FR 1164844A
Authority
FR
France
Prior art keywords
semiconductor structure
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Application granted granted Critical
Publication of FR1164844A publication Critical patent/FR1164844A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
FR1164844D 1957-01-18 1957-01-18 Structure semi-conductrice Expired FR1164844A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR729817 1957-01-18

Publications (1)

Publication Number Publication Date
FR1164844A true FR1164844A (fr) 1958-10-14

Family

ID=8704072

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1164844D Expired FR1164844A (fr) 1957-01-18 1957-01-18 Structure semi-conductrice

Country Status (5)

Country Link
US (1) US2962605A (en, 2012)
DE (1) DE1067129B (en, 2012)
FR (1) FR1164844A (en, 2012)
GB (1) GB883906A (en, 2012)
NL (2) NL224173A (en, 2012)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL155412C (en, 2012) * 1959-04-15
US3140438A (en) * 1959-05-08 1964-07-07 Clevite Corp Voltage regulating semiconductor device
US3263085A (en) * 1960-02-01 1966-07-26 Rca Corp Radiation powered semiconductor devices
US3219837A (en) * 1960-02-29 1965-11-23 Sanyo Electric Co Negative resistance transistors
US3157540A (en) * 1960-05-31 1964-11-17 Engelhard Ind Inc High pressure process for improving the mechanical properties of metals
US3124703A (en) * 1960-06-13 1964-03-10 Figure
US3040188A (en) * 1960-10-28 1962-06-19 Wolfgang W Gaertner Three zone negative resistance junction diode having a short circuit across one of the junctions
US3254278A (en) * 1960-11-14 1966-05-31 Hoffman Electronics Corp Tunnel diode device
US3134905A (en) * 1961-02-03 1964-05-26 Bell Telephone Labor Inc Photosensitive semiconductor junction device
US3260900A (en) * 1961-04-27 1966-07-12 Merck & Co Inc Temperature compensating barrier layer semiconductor
NL280641A (en, 2012) * 1961-07-07
NL280849A (en, 2012) * 1961-07-12 1900-01-01
BE628619A (en, 2012) * 1962-02-20
NL280435A (en, 2012) * 1962-07-02
US3265899A (en) * 1962-07-25 1966-08-09 Gen Motors Corp Semiconductor amplifying radiation detector
GB1052661A (en, 2012) * 1963-01-30 1900-01-01
US3304470A (en) * 1963-03-14 1967-02-14 Nippon Electric Co Negative resistance semiconductor device utilizing tunnel effect
US3327136A (en) * 1964-03-30 1967-06-20 Abraham George Variable gain tunneling
US3284681A (en) * 1964-07-01 1966-11-08 Gen Electric Pnpn semiconductor switching devices with stabilized firing characteristics
US3413527A (en) * 1964-10-02 1968-11-26 Gen Electric Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device
US3268782A (en) * 1965-02-02 1966-08-23 Int Rectifier Corp High rate of rise of current-fourlayer device
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics
US8408792B2 (en) 2007-03-30 2013-04-02 Kraft Foods Global Brands Llc Package integrity indicating closure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048359B (en, 2012) * 1952-07-22
US2709780A (en) * 1952-10-11 1955-05-31 Bell Telephone Labor Inc Constant voltage semiconductor devices
US2764642A (en) * 1952-10-31 1956-09-25 Bell Telephone Labor Inc Semiconductor signal translating devices
US2795742A (en) * 1952-12-12 1957-06-11 Bell Telephone Labor Inc Semiconductive translating devices utilizing selected natural grain boundaries
US2779877A (en) * 1955-06-17 1957-01-29 Sprague Electric Co Multiple junction transistor unit

Also Published As

Publication number Publication date
GB883906A (en) 1961-12-06
DE1067129B (en, 2012)
US2962605A (en) 1960-11-29
NL224173A (en, 2012)
NL113266C (en, 2012)

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