FR1139678A - Translateurs d'impulsions à semi-conducteur - Google Patents

Translateurs d'impulsions à semi-conducteur

Info

Publication number
FR1139678A
FR1139678A FR1139678DA FR1139678A FR 1139678 A FR1139678 A FR 1139678A FR 1139678D A FR1139678D A FR 1139678DA FR 1139678 A FR1139678 A FR 1139678A
Authority
FR
France
Prior art keywords
translators
semiconductor pulse
pulse
semiconductor
pulse translators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1139678A publication Critical patent/FR1139678A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K23/00Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926Elongated lead extending axially through another elongated lead

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
FR1139678D 1955-06-20 1955-11-09 Translateurs d'impulsions à semi-conducteur Expired FR1139678A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US516521A US2877358A (en) 1955-06-20 1955-06-20 Semiconductive pulse translator

Publications (1)

Publication Number Publication Date
FR1139678A true FR1139678A (fr) 1957-07-03

Family

ID=24055950

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1139678D Expired FR1139678A (fr) 1955-06-20 1955-11-09 Translateurs d'impulsions à semi-conducteur

Country Status (6)

Country Link
US (1) US2877358A (fr)
BE (1) BE547917A (fr)
CH (1) CH351635A (fr)
DE (1) DE1044888B (fr)
FR (1) FR1139678A (fr)
GB (1) GB805207A (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB827117A (en) * 1958-01-03 1960-02-03 Standard Telephones Cables Ltd Improvements in or relating to semi-conductor devices
NL213944A (fr) * 1956-01-23
US2922898A (en) * 1956-03-27 1960-01-26 Sylvania Electric Prod Electronic counter
US2967952A (en) * 1956-04-25 1961-01-10 Shockley William Semiconductor shift register
US3141119A (en) * 1957-03-28 1964-07-14 Westinghouse Electric Corp Hyperconductive transistor switches
US3038085A (en) * 1958-03-25 1962-06-05 Rca Corp Shift-register utilizing unitary multielectrode semiconductor device
US3070711A (en) * 1958-12-16 1962-12-25 Rca Corp Shift register
GB945742A (fr) * 1959-02-06 Texas Instruments Inc
US3091703A (en) * 1959-04-08 1963-05-28 Raytheon Co Semiconductor devices utilizing carrier injection into a space charge region
NL123574C (fr) * 1959-05-27
US3118130A (en) * 1959-06-01 1964-01-14 Massachusetts Inst Technology Bilateral bistable semiconductor switching matrix
US3040196A (en) * 1959-07-22 1962-06-19 Bell Telephone Labor Inc Semiconductor pulse translating system
US3175099A (en) * 1959-10-03 1965-03-23 Nippon Electric Co Semiconductor pulse shifter
US3247396A (en) * 1960-03-31 1966-04-19 Gen Electric Electronic circuit utilizing tunnel diode devices
US3001110A (en) * 1960-11-03 1961-09-19 Pacific Semiconductors Inc Coaxial semiconductors
US3171973A (en) * 1961-01-09 1965-03-02 Varian Associates Solid-state semiconductor device for deflecting a current to different conduction zones within device for counting
US3114847A (en) * 1962-01-16 1963-12-17 Nippon Electric Co Semiconductor pulse counting device with graded low resistivity region sandwiched between two high resistance regions
US3325652A (en) * 1964-03-06 1967-06-13 Univ Minnesota Neuristor and process for making the same
US3811074A (en) * 1971-04-10 1974-05-14 Nippon Telegraph & Telephone Semiconductor device and apparatus using the same
US3925802A (en) * 1973-02-27 1975-12-09 Mitsubishi Electric Corp Semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB654909A (en) * 1948-10-27 1951-07-04 Standard Telephones Cables Ltd Improvements in or relating to electric delay devices employing semi-conductors
BE558880A (fr) * 1949-04-01
CA509126A (fr) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Dispositifs translateurs de semi-conducteurs
NL96818C (fr) * 1952-03-14
US2800617A (en) * 1954-06-01 1957-07-23 Rca Corp Semiconductor devices

Also Published As

Publication number Publication date
BE547917A (fr) 1956-06-15
GB805207A (en) 1958-12-03
CH351635A (de) 1961-01-31
DE1044888B (de) 1958-11-27
US2877358A (en) 1959-03-10

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