FR1139678A - Translateurs d'impulsions à semi-conducteur - Google Patents
Translateurs d'impulsions à semi-conducteurInfo
- Publication number
- FR1139678A FR1139678A FR1139678DA FR1139678A FR 1139678 A FR1139678 A FR 1139678A FR 1139678D A FR1139678D A FR 1139678DA FR 1139678 A FR1139678 A FR 1139678A
- Authority
- FR
- France
- Prior art keywords
- translators
- semiconductor pulse
- pulse
- semiconductor
- pulse translators
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US516521A US2877358A (en) | 1955-06-20 | 1955-06-20 | Semiconductive pulse translator |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1139678A true FR1139678A (fr) | 1957-07-03 |
Family
ID=24055950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1139678D Expired FR1139678A (fr) | 1955-06-20 | 1955-11-09 | Translateurs d'impulsions à semi-conducteur |
Country Status (6)
Country | Link |
---|---|
US (1) | US2877358A (fr) |
BE (1) | BE547917A (fr) |
CH (1) | CH351635A (fr) |
DE (1) | DE1044888B (fr) |
FR (1) | FR1139678A (fr) |
GB (1) | GB805207A (fr) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB827117A (en) * | 1958-01-03 | 1960-02-03 | Standard Telephones Cables Ltd | Improvements in or relating to semi-conductor devices |
NL213944A (fr) * | 1956-01-23 | |||
US2922898A (en) * | 1956-03-27 | 1960-01-26 | Sylvania Electric Prod | Electronic counter |
US2967952A (en) * | 1956-04-25 | 1961-01-10 | Shockley William | Semiconductor shift register |
US3141119A (en) * | 1957-03-28 | 1964-07-14 | Westinghouse Electric Corp | Hyperconductive transistor switches |
US3038085A (en) * | 1958-03-25 | 1962-06-05 | Rca Corp | Shift-register utilizing unitary multielectrode semiconductor device |
US3070711A (en) * | 1958-12-16 | 1962-12-25 | Rca Corp | Shift register |
GB945742A (fr) * | 1959-02-06 | Texas Instruments Inc | ||
US3091703A (en) * | 1959-04-08 | 1963-05-28 | Raytheon Co | Semiconductor devices utilizing carrier injection into a space charge region |
NL123574C (fr) * | 1959-05-27 | |||
US3118130A (en) * | 1959-06-01 | 1964-01-14 | Massachusetts Inst Technology | Bilateral bistable semiconductor switching matrix |
US3040196A (en) * | 1959-07-22 | 1962-06-19 | Bell Telephone Labor Inc | Semiconductor pulse translating system |
US3175099A (en) * | 1959-10-03 | 1965-03-23 | Nippon Electric Co | Semiconductor pulse shifter |
US3247396A (en) * | 1960-03-31 | 1966-04-19 | Gen Electric | Electronic circuit utilizing tunnel diode devices |
US3001110A (en) * | 1960-11-03 | 1961-09-19 | Pacific Semiconductors Inc | Coaxial semiconductors |
US3171973A (en) * | 1961-01-09 | 1965-03-02 | Varian Associates | Solid-state semiconductor device for deflecting a current to different conduction zones within device for counting |
US3114847A (en) * | 1962-01-16 | 1963-12-17 | Nippon Electric Co | Semiconductor pulse counting device with graded low resistivity region sandwiched between two high resistance regions |
US3325652A (en) * | 1964-03-06 | 1967-06-13 | Univ Minnesota | Neuristor and process for making the same |
US3811074A (en) * | 1971-04-10 | 1974-05-14 | Nippon Telegraph & Telephone | Semiconductor device and apparatus using the same |
US3925802A (en) * | 1973-02-27 | 1975-12-09 | Mitsubishi Electric Corp | Semiconductor device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB654909A (en) * | 1948-10-27 | 1951-07-04 | Standard Telephones Cables Ltd | Improvements in or relating to electric delay devices employing semi-conductors |
BE558880A (fr) * | 1949-04-01 | |||
CA509126A (fr) * | 1949-05-28 | 1955-01-11 | Western Electric Company, Incorporated | Dispositifs translateurs de semi-conducteurs |
NL96818C (fr) * | 1952-03-14 | |||
US2800617A (en) * | 1954-06-01 | 1957-07-23 | Rca Corp | Semiconductor devices |
-
1955
- 1955-06-20 US US516521A patent/US2877358A/en not_active Expired - Lifetime
- 1955-11-09 FR FR1139678D patent/FR1139678A/fr not_active Expired
-
1956
- 1956-04-18 DE DEW18879A patent/DE1044888B/de active Pending
- 1956-05-18 BE BE547917A patent/BE547917A/xx unknown
- 1956-06-08 GB GB17784/56A patent/GB805207A/en not_active Expired
- 1956-06-19 CH CH351635D patent/CH351635A/de unknown
Also Published As
Publication number | Publication date |
---|---|
BE547917A (fr) | 1956-06-15 |
GB805207A (en) | 1958-12-03 |
CH351635A (de) | 1961-01-31 |
DE1044888B (de) | 1958-11-27 |
US2877358A (en) | 1959-03-10 |
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