FR1135316A - Nouveau procédé de préparation des jonctions p-n - Google Patents

Nouveau procédé de préparation des jonctions p-n

Info

Publication number
FR1135316A
FR1135316A FR1135316DA FR1135316A FR 1135316 A FR1135316 A FR 1135316A FR 1135316D A FR1135316D A FR 1135316DA FR 1135316 A FR1135316 A FR 1135316A
Authority
FR
France
Prior art keywords
junctions
preparing
new process
new
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1135316A publication Critical patent/FR1135316A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Die Bonding (AREA)
  • Bipolar Transistors (AREA)
FR1135316D 1954-06-29 1955-06-21 Nouveau procédé de préparation des jonctions p-n Expired FR1135316A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US440091A US2960418A (en) 1954-06-29 1954-06-29 Semiconductor device and method for fabricating same

Publications (1)

Publication Number Publication Date
FR1135316A true FR1135316A (fr) 1957-04-26

Family

ID=23747399

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1135316D Expired FR1135316A (fr) 1954-06-29 1955-06-21 Nouveau procédé de préparation des jonctions p-n

Country Status (5)

Country Link
US (1) US2960418A (fr)
DE (1) DE1006977B (fr)
FR (1) FR1135316A (fr)
GB (1) GB782035A (fr)
NL (2) NL106130C (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3015874A (en) * 1957-04-10 1962-01-09 Philco Corp Method for fabricating semiconductor devices
BE559757A (fr) * 1957-08-01
DE1132250B (de) * 1959-03-19 1962-06-28 Telefunken Patent Vorrichtung zum Ausstanzen und Aufdruecken von Legierungspillen auf einen Halbleiterkristall zur Herstellung einer Halbleiteranordnung
DE1117775B (de) * 1959-07-01 1961-11-23 Siemens Ag Vorrichtung zum Kontaktieren scheibenfoermiger einkristalliner Halbleiterkoerper
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
DE1126999B (de) * 1959-07-23 1962-04-05 Telefunken Patent Vorrichtung zum Andruecken von Legierungsmaterial an einen Halbleiterkoerper
DE1108813B (de) * 1959-10-22 1961-06-15 Eberle & Koehler K G Verfahren zur Herstellung von grossflaechigen sperrenden und sperrfreien Kontakten an Halbleiterkoerpern
NL255865A (fr) * 1960-09-13 1900-01-01
NL274847A (fr) * 1961-02-16
DE1273701B (de) * 1965-11-27 1968-07-25 Telefunken Patent Vorrichtung zum Herstellen einer Halbleiteranordnung
US4028722A (en) * 1970-10-13 1977-06-07 Motorola, Inc. Contact bonded packaged integrated circuit
US3698073A (en) * 1970-10-13 1972-10-17 Motorola Inc Contact bonding and packaging of integrated circuits

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL82014C (fr) * 1949-11-30
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
US2791524A (en) * 1953-04-03 1957-05-07 Gen Electric Fabrication method for p-n junctions
BE506280A (fr) * 1950-10-10
US2697052A (en) * 1953-07-24 1954-12-14 Bell Telephone Labor Inc Fabricating of semiconductor translating devices

Also Published As

Publication number Publication date
DE1006977B (de) 1957-04-25
US2960418A (en) 1960-11-15
NL198430A (fr)
NL106130C (fr)
GB782035A (en) 1957-08-28

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