FR1133710A - Manufacture of an economical type of junction transistrons - Google Patents

Manufacture of an economical type of junction transistrons

Info

Publication number
FR1133710A
FR1133710A FR1133710DA FR1133710A FR 1133710 A FR1133710 A FR 1133710A FR 1133710D A FR1133710D A FR 1133710DA FR 1133710 A FR1133710 A FR 1133710A
Authority
FR
France
Prior art keywords
transistrons
junction
manufacture
economical type
economical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Inventor
Rene Deschamps
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Application granted granted Critical
Publication of FR1133710A publication Critical patent/FR1133710A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR1133710D 1955-10-17 1955-10-17 Manufacture of an economical type of junction transistrons Expired FR1133710A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1133710T 1955-10-17

Publications (1)

Publication Number Publication Date
FR1133710A true FR1133710A (en) 1957-04-01

Family

ID=9639024

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1133710D Expired FR1133710A (en) 1955-10-17 1955-10-17 Manufacture of an economical type of junction transistrons

Country Status (1)

Country Link
FR (1) FR1133710A (en)

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