FR1131499A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- FR1131499A FR1131499A FR1131499DA FR1131499A FR 1131499 A FR1131499 A FR 1131499A FR 1131499D A FR1131499D A FR 1131499DA FR 1131499 A FR1131499 A FR 1131499A
- Authority
- FR
- France
- Prior art keywords
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1131499X | 1954-05-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1131499A true FR1131499A (en) | 1957-02-21 |
Family
ID=10876367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1131499D Expired FR1131499A (en) | 1954-05-03 | 1955-04-27 | Semiconductor devices |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1131499A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1104075B (en) * | 1958-05-14 | 1961-04-06 | Telefunken Gmbh | Semiconductor rectifiers, in particular high-frequency rectifiers, with an n np or p pn sequence of the semiconductor zones in the semiconductor body and method for its production |
-
1955
- 1955-04-27 FR FR1131499D patent/FR1131499A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1104075B (en) * | 1958-05-14 | 1961-04-06 | Telefunken Gmbh | Semiconductor rectifiers, in particular high-frequency rectifiers, with an n np or p pn sequence of the semiconductor zones in the semiconductor body and method for its production |
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