FR1123706A - Improvements in electrical semiconductors - Google Patents

Improvements in electrical semiconductors

Info

Publication number
FR1123706A
FR1123706A FR1123706DA FR1123706A FR 1123706 A FR1123706 A FR 1123706A FR 1123706D A FR1123706D A FR 1123706DA FR 1123706 A FR1123706 A FR 1123706A
Authority
FR
France
Prior art keywords
electrical semiconductors
semiconductors
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1123706A publication Critical patent/FR1123706A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1123706D 1954-05-03 1955-03-11 Improvements in electrical semiconductors Expired FR1123706A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US427098A US2817798A (en) 1954-05-03 1954-05-03 Semiconductors

Publications (1)

Publication Number Publication Date
FR1123706A true FR1123706A (en) 1956-09-26

Family

ID=23693481

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1123706D Expired FR1123706A (en) 1954-05-03 1955-03-11 Improvements in electrical semiconductors

Country Status (5)

Country Link
US (1) US2817798A (en)
BE (1) BE537841A (en)
CH (1) CH354168A (en)
FR (1) FR1123706A (en)
GB (1) GB808973A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1166938B (en) * 1960-07-01 1964-04-02 Siemens Ag Method for manufacturing a semiconductor device
CN115975745A (en) * 2023-01-04 2023-04-18 四川晶科能源有限公司 Formula and method for pickling seed crystal

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL179061C (en) * 1952-06-13 Dow Chemical Co PROCESS FOR PREPARING A FOAM MASS FROM COPOLYMERS OF AN AROMATIC MONOVINYLIDES MONOMER AND AN ETHENICALLY UNSATURATED CARBONIC ANHYDRIDE, AND THE FOAM-FORMED OBJECTS MANUFACTURED THIS.
US2919389A (en) * 1955-04-28 1959-12-29 Siemens Ag Semiconductor arrangement for voltage-dependent capacitances
DE1170555B (en) * 1956-07-23 1964-05-21 Siemens Ag Method for manufacturing a semiconductor component with three zones of alternating conductivity types
NL121500C (en) * 1958-09-02
US3124493A (en) * 1959-01-26 1964-03-10 Method for making the same
US3235957A (en) * 1964-05-20 1966-02-22 Rca Corp Method of manufacturing a thermoelectric device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2485069A (en) * 1944-07-20 1949-10-18 Bell Telephone Labor Inc Translating material of silicon base
US2538593A (en) * 1949-04-30 1951-01-16 Rca Corp Semiconductor amplifier construction
US2731704A (en) * 1952-12-27 1956-01-24 Raytheon Mfg Co Method of making transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1166938B (en) * 1960-07-01 1964-04-02 Siemens Ag Method for manufacturing a semiconductor device
CN115975745A (en) * 2023-01-04 2023-04-18 四川晶科能源有限公司 Formula and method for pickling seed crystal

Also Published As

Publication number Publication date
CH354168A (en) 1961-05-15
GB808973A (en) 1959-02-18
US2817798A (en) 1957-12-24
BE537841A (en) 1900-01-01

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