FR1109535A - Improvements to nu-p junctions manufacturing processes - Google Patents

Improvements to nu-p junctions manufacturing processes

Info

Publication number
FR1109535A
FR1109535A FR1109535DA FR1109535A FR 1109535 A FR1109535 A FR 1109535A FR 1109535D A FR1109535D A FR 1109535DA FR 1109535 A FR1109535 A FR 1109535A
Authority
FR
France
Prior art keywords
junctions
manufacturing processes
processes
manufacturing
junctions manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Application granted granted Critical
Publication of FR1109535A publication Critical patent/FR1109535A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR1109535D 1954-07-30 1954-07-30 Improvements to nu-p junctions manufacturing processes Expired FR1109535A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1109535T 1954-07-30

Publications (1)

Publication Number Publication Date
FR1109535A true FR1109535A (en) 1956-01-30

Family

ID=9625648

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1109535D Expired FR1109535A (en) 1954-07-30 1954-07-30 Improvements to nu-p junctions manufacturing processes

Country Status (1)

Country Link
FR (1) FR1109535A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1062823B (en) * 1957-07-13 1959-08-06 Telefunken Gmbh Process for the manufacture of alloy type crystallodes
DE1148661B (en) * 1959-05-29 1963-05-16 Siemens Ag Process for the production of semiconductor arrangements with an alloyed pn junction
DE1162487B (en) * 1959-05-06 1964-02-06 Nippon Telegraph & Telephone Process for the production of alloyed pn-junctions of a high-frequency-area transistor
DE1170082B (en) * 1960-03-25 1964-05-14 Western Electric Co Method for manufacturing semiconductor components
DE1185296B (en) * 1961-07-08 1965-01-14 Telefunken Patent Device and method for manufacturing semiconductor devices
DE1233495B (en) * 1960-02-24 1967-02-02 Nippon Telegraph & Telephone Process for the production of tunnel diodes
DE1233949B (en) * 1959-07-13 1967-02-09 Siemens Ag Method for producing a semiconductor rectifier arrangement with a single-crystal semiconductor body
DE1292259B (en) * 1959-02-04 1969-04-10 Telefunken Patent Process for manufacturing transistors by alloying
DE1292257B (en) * 1960-08-30 1969-04-10 Siemens Ag Method for alloying an electrode with the formation of a pn junction in a semiconducting germanium crystal for a semiconductor component

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1062823B (en) * 1957-07-13 1959-08-06 Telefunken Gmbh Process for the manufacture of alloy type crystallodes
DE1292259B (en) * 1959-02-04 1969-04-10 Telefunken Patent Process for manufacturing transistors by alloying
DE1162487B (en) * 1959-05-06 1964-02-06 Nippon Telegraph & Telephone Process for the production of alloyed pn-junctions of a high-frequency-area transistor
DE1148661B (en) * 1959-05-29 1963-05-16 Siemens Ag Process for the production of semiconductor arrangements with an alloyed pn junction
DE1233949B (en) * 1959-07-13 1967-02-09 Siemens Ag Method for producing a semiconductor rectifier arrangement with a single-crystal semiconductor body
DE1233495B (en) * 1960-02-24 1967-02-02 Nippon Telegraph & Telephone Process for the production of tunnel diodes
DE1170082B (en) * 1960-03-25 1964-05-14 Western Electric Co Method for manufacturing semiconductor components
DE1292257B (en) * 1960-08-30 1969-04-10 Siemens Ag Method for alloying an electrode with the formation of a pn junction in a semiconducting germanium crystal for a semiconductor component
DE1185296B (en) * 1961-07-08 1965-01-14 Telefunken Patent Device and method for manufacturing semiconductor devices

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