FR1095877A - Perfectionnements aux appareils utilisant des semi-conducteurs - Google Patents

Perfectionnements aux appareils utilisant des semi-conducteurs

Info

Publication number
FR1095877A
FR1095877A FR1095877DA FR1095877A FR 1095877 A FR1095877 A FR 1095877A FR 1095877D A FR1095877D A FR 1095877DA FR 1095877 A FR1095877 A FR 1095877A
Authority
FR
France
Prior art keywords
semiconductors
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1095877A publication Critical patent/FR1095877A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
FR1095877D 1953-01-19 1954-01-19 Perfectionnements aux appareils utilisant des semi-conducteurs Expired FR1095877A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1095877XA 1953-01-19 1953-01-19

Publications (1)

Publication Number Publication Date
FR1095877A true FR1095877A (fr) 1955-06-07

Family

ID=22328471

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1095877D Expired FR1095877A (fr) 1953-01-19 1954-01-19 Perfectionnements aux appareils utilisant des semi-conducteurs

Country Status (3)

Country Link
BE (1) BE525832A (nl)
FR (1) FR1095877A (nl)
NL (1) NL184455C (nl)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1042128B (de) * 1955-11-12 1958-10-30 Siemens Ag Doppelbasistransistor zum Erzeugen von Schalt- oder Kippvorgaengen
DE1042763B (de) * 1956-01-23 1958-11-06 Siemens Ag Fadenhalbleiteranordnung mit mehreren stabilen Arbeitspunkten
DE1086752B (de) * 1956-03-21 1960-08-11 Honeywell Regulator Co Leistungsverstaerkerstufe mit Doppelbasistransistor in Emitterschaltung

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1042128B (de) * 1955-11-12 1958-10-30 Siemens Ag Doppelbasistransistor zum Erzeugen von Schalt- oder Kippvorgaengen
DE1042763B (de) * 1956-01-23 1958-11-06 Siemens Ag Fadenhalbleiteranordnung mit mehreren stabilen Arbeitspunkten
DE1086752B (de) * 1956-03-21 1960-08-11 Honeywell Regulator Co Leistungsverstaerkerstufe mit Doppelbasistransistor in Emitterschaltung

Also Published As

Publication number Publication date
NL184455C (nl)
BE525832A (nl)

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