Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/34—Dc amplifiers in which all stages are dc-coupled
  • H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
  • H03F3/3432—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with bipolar transistors
  • H03F3/3435—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
  • H03F3/3437—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers with complementary transistors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
  • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
  • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L27/0688—Integrated circuits having a three-dimensional layout
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Ceramic Engineering (AREA)
• Amplifiers (AREA)
• Bipolar Integrated Circuits (AREA)
• Bipolar Transistors (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=19825189

Family Applications (1)

Country Status (4)

Families Citing this family (2)

Family Cites Families (2)

• 0
  • NL NL95282D patent/NL95282C/xx active
  • NL NLAANVRAGE7511053,A patent/NL175251B/en unknown
• 1954
  • 1954-01-08 GB GB597/54A patent/GB753015A/en not_active Expired
  • 1954-01-10 DE DEN8285A patent/DE966571C/en not_active Expired
  • 1954-01-11 FR FR1091289D patent/FR1091289A/en not_active Expired

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