FR1071730A - Process for melting substances with a high degree of purity - Google Patents

Process for melting substances with a high degree of purity

Info

Publication number
FR1071730A
FR1071730A FR1071730DA FR1071730A FR 1071730 A FR1071730 A FR 1071730A FR 1071730D A FR1071730D A FR 1071730DA FR 1071730 A FR1071730 A FR 1071730A
Authority
FR
France
Prior art keywords
purity
high degree
melting substances
melting
substances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Application granted granted Critical
Publication of FR1071730A publication Critical patent/FR1071730A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
FR1071730D 1951-09-08 1952-09-06 Process for melting substances with a high degree of purity Expired FR1071730A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1951L0010056 DE895474C (en) 1951-09-08 1951-09-08 Process for melting highly purified substances

Publications (1)

Publication Number Publication Date
FR1071730A true FR1071730A (en) 1954-09-03

Family

ID=7258270

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1071730D Expired FR1071730A (en) 1951-09-08 1952-09-06 Process for melting substances with a high degree of purity

Country Status (2)

Country Link
DE (1) DE895474C (en)
FR (1) FR1071730A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2787564A (en) * 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
US2858199A (en) * 1954-10-15 1958-10-28 Itt Crystal production
DE1110877B (en) * 1959-04-24 1961-07-13 Heraeus Gmbh W C Process for melting metal blocks using electron beams

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1030463B (en) * 1954-07-31 1958-05-22 Licentia Gmbh Process for the production of semiconductor crystals with p-n junctions
DE1084840B (en) * 1957-01-23 1960-07-07 Intermetall Process for the production of spherical semiconductor bodies made of silicon from semiconductor devices, e.g. B. peak rectifiers or peak transistors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2858199A (en) * 1954-10-15 1958-10-28 Itt Crystal production
US2787564A (en) * 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
DE1110877B (en) * 1959-04-24 1961-07-13 Heraeus Gmbh W C Process for melting metal blocks using electron beams

Also Published As

Publication number Publication date
DE895474C (en) 1953-11-02

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