FR1020117A - Dispositif translateur semi-conducteur à contacts multiples - Google Patents

Dispositif translateur semi-conducteur à contacts multiples

Info

Publication number
FR1020117A
FR1020117A FR1020117DA FR1020117A FR 1020117 A FR1020117 A FR 1020117A FR 1020117D A FR1020117D A FR 1020117DA FR 1020117 A FR1020117 A FR 1020117A
Authority
FR
France
Prior art keywords
multiple contact
contact semiconductor
translator device
semiconductor translator
translator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1020117A publication Critical patent/FR1020117A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/72—Indexing scheme relating to amplifiers the amplifier stage being a common gate configuration MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR1020117D 1949-08-17 1950-06-13 Dispositif translateur semi-conducteur à contacts multiples Expired FR1020117A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1020117XA 1949-08-17 1949-08-17

Publications (1)

Publication Number Publication Date
FR1020117A true FR1020117A (fr) 1953-02-02

Family

ID=22287640

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1020117D Expired FR1020117A (fr) 1949-08-17 1950-06-13 Dispositif translateur semi-conducteur à contacts multiples

Country Status (1)

Country Link
FR (1) FR1020117A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1039645B (de) * 1955-03-24 1958-09-25 Hughes Aircraft Co In ein Metallgehaeuse mit isolierten Leitungsdurchfuehrungen eingeschlossene Halbleiter-Kristallode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1039645B (de) * 1955-03-24 1958-09-25 Hughes Aircraft Co In ein Metallgehaeuse mit isolierten Leitungsdurchfuehrungen eingeschlossene Halbleiter-Kristallode

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