FR1018849A - Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux - Google Patents
Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristauxInfo
- Publication number
- FR1018849A FR1018849A FR1018849DA FR1018849A FR 1018849 A FR1018849 A FR 1018849A FR 1018849D A FR1018849D A FR 1018849DA FR 1018849 A FR1018849 A FR 1018849A
- Authority
- FR
- France
- Prior art keywords
- semiconductors
- crystals
- amplifier devices
- amplifier
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
- C25C3/06—Electrolytic production, recovery or refining of metals by electrolysis of melts of aluminium
- C25C3/08—Cell construction, e.g. bottoms, walls, cathodes
- C25C3/12—Anodes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
Applications Claiming Priority (19)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR66334T | |||
FR66323T | |||
FR61721T | |||
FR72093T | |||
FR6630T | 1906-09-03 | ||
GB8905/49A GB665867A (en) | 1949-04-01 | 1949-04-01 | Improvements in or relating to crystal triodes and semi-conductor materials therefor |
FR60825T | 1950-03-31 | ||
FR66308T | 1952-03-01 | ||
FR66312T | 1952-08-25 | ||
FR66315T | 1953-05-27 | ||
FR66322T | 1953-10-09 | ||
FR66528T | 1954-05-17 | ||
FR66577T | 1954-06-01 | ||
FR66578T | 1954-06-10 | ||
FR66594T | 1954-06-25 | ||
FR67153T | 1954-07-22 | ||
FR67182T | 1954-10-01 | ||
FR69122T | 1955-04-08 | ||
FR69175T | 1955-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1018849A true FR1018849A (fr) | 1953-01-13 |
Family
ID=68382083
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1018849D Expired FR1018849A (fr) | 1906-09-03 | 1950-03-31 | Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux |
FR61721D Expired FR61721E (fr) | 1906-09-03 | 1951-05-30 | Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux |
FR66309D Expired FR66309E (fr) | 1906-09-03 | 1952-03-01 | Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR61721D Expired FR61721E (fr) | 1906-09-03 | 1951-05-30 | Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux |
FR66309D Expired FR66309E (fr) | 1906-09-03 | 1952-03-01 | Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux |
Country Status (1)
Country | Link |
---|---|
FR (3) | FR1018849A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3026422A (en) * | 1956-10-22 | 1962-03-20 | Gen Electric Co Ltd | Transistor shift register with blocking oscillator stages |
-
1950
- 1950-03-31 FR FR1018849D patent/FR1018849A/fr not_active Expired
-
1951
- 1951-05-30 FR FR61721D patent/FR61721E/fr not_active Expired
-
1952
- 1952-03-01 FR FR66309D patent/FR66309E/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3026422A (en) * | 1956-10-22 | 1962-03-20 | Gen Electric Co Ltd | Transistor shift register with blocking oscillator stages |
Also Published As
Publication number | Publication date |
---|---|
FR61721E (fr) | 1955-05-17 |
FR66309E (fr) | 1956-06-29 |
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