FI922852A0 - Menetelmä ja laitteisto nestemäisten reagenssien syöttämiseksi kemialliseen reaktoriin - Google Patents
Menetelmä ja laitteisto nestemäisten reagenssien syöttämiseksi kemialliseen reaktoriinInfo
- Publication number
- FI922852A0 FI922852A0 FI922852A FI922852A FI922852A0 FI 922852 A0 FI922852 A0 FI 922852A0 FI 922852 A FI922852 A FI 922852A FI 922852 A FI922852 A FI 922852A FI 922852 A0 FI922852 A0 FI 922852A0
- Authority
- FI
- Finland
- Prior art keywords
- supplying liquid
- chemical reactor
- liquid reagents
- reagents
- reactor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI922852A FI91422C (fi) | 1992-06-18 | 1992-06-18 | Menetelmä ja laitteisto nestemäisten reagenssien syöttämiseksi kemialliseen reaktoriin |
FR9307243A FR2692597A1 (fr) | 1992-06-18 | 1993-06-16 | Procédé et appareil pour introduire des réactifs en phase liquide dans un réacteur chimique, et application au dépôt chimique en phase vapeur d'un revêtement sur un substrat. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI922852 | 1992-06-18 | ||
FI922852A FI91422C (fi) | 1992-06-18 | 1992-06-18 | Menetelmä ja laitteisto nestemäisten reagenssien syöttämiseksi kemialliseen reaktoriin |
Publications (4)
Publication Number | Publication Date |
---|---|
FI922852A0 true FI922852A0 (fi) | 1992-06-18 |
FI922852A FI922852A (fi) | 1993-12-19 |
FI91422B FI91422B (fi) | 1994-03-15 |
FI91422C FI91422C (fi) | 1994-06-27 |
Family
ID=8535501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI922852A FI91422C (fi) | 1992-06-18 | 1992-06-18 | Menetelmä ja laitteisto nestemäisten reagenssien syöttämiseksi kemialliseen reaktoriin |
Country Status (2)
Country | Link |
---|---|
FI (1) | FI91422C (fi) |
FR (1) | FR2692597A1 (fi) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW565626B (en) * | 1996-11-20 | 2003-12-11 | Ebara Corp | Liquid feed vaporization system and gas injection device |
US6635114B2 (en) | 1999-12-17 | 2003-10-21 | Applied Material, Inc. | High temperature filter for CVD apparatus |
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
US6620670B2 (en) | 2002-01-18 | 2003-09-16 | Applied Materials, Inc. | Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
KR100877020B1 (ko) * | 2005-03-29 | 2009-01-07 | 가시오게산키 가부시키가이샤 | 증발 장치 및 액체 흡수 부재 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4076866A (en) * | 1975-03-30 | 1978-02-28 | Massachusetts Institute Of Technology | Method of growing films by flash vaporization |
JPS58143522A (ja) * | 1982-02-19 | 1983-08-26 | Matsushita Electric Ind Co Ltd | 液体気化装置 |
DE8910733U1 (fi) * | 1989-09-08 | 1990-04-12 | Hussla, Ingo, Dr., 6450 Hanau, De | |
US5204314A (en) * | 1990-07-06 | 1993-04-20 | Advanced Technology Materials, Inc. | Method for delivering an involatile reagent in vapor form to a CVD reactor |
-
1992
- 1992-06-18 FI FI922852A patent/FI91422C/fi not_active IP Right Cessation
-
1993
- 1993-06-16 FR FR9307243A patent/FR2692597A1/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2692597A1 (fr) | 1993-12-24 |
FI922852A (fi) | 1993-12-19 |
FI91422B (fi) | 1994-03-15 |
FI91422C (fi) | 1994-06-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | Publication of examined application | ||
MM | Patent lapsed |