FI902040A0 - FOERFARANDE FOER ATT FRAMSTAELLA TUNNFILMRESISTANSSKIKT. - Google Patents

FOERFARANDE FOER ATT FRAMSTAELLA TUNNFILMRESISTANSSKIKT.

Info

Publication number
FI902040A0
FI902040A0 FI902040A FI902040A FI902040A0 FI 902040 A0 FI902040 A0 FI 902040A0 FI 902040 A FI902040 A FI 902040A FI 902040 A FI902040 A FI 902040A FI 902040 A0 FI902040 A0 FI 902040A0
Authority
FI
Finland
Prior art keywords
tunnfilmresistansskikt
foerfarande foer
foer att
att framstaella
framstaella
Prior art date
Application number
FI902040A
Other languages
Finnish (fi)
Inventor
Heinz Ebner
Andreas Stutz
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of FI902040A0 publication Critical patent/FI902040A0/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FI902040A 1989-04-24 1990-04-23 FOERFARANDE FOER ATT FRAMSTAELLA TUNNFILMRESISTANSSKIKT. FI902040A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP89107394 1989-04-24

Publications (1)

Publication Number Publication Date
FI902040A0 true FI902040A0 (en) 1990-04-23

Family

ID=8201279

Family Applications (1)

Application Number Title Priority Date Filing Date
FI902040A FI902040A0 (en) 1989-04-24 1990-04-23 FOERFARANDE FOER ATT FRAMSTAELLA TUNNFILMRESISTANSSKIKT.

Country Status (5)

Country Link
EP (1) EP0394658A1 (en)
JP (1) JPH02294466A (en)
KR (1) KR900017108A (en)
CA (1) CA2015008A1 (en)
FI (1) FI902040A0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0736881B1 (en) * 1995-03-09 2000-05-24 Philips Patentverwaltung GmbH Electrical resistance device with CrSi resistance layer
ATE544878T1 (en) * 2004-08-06 2012-02-15 Applied Materials Gmbh & Co Kg DEVICE AND METHOD FOR PRODUCING GAS-PERMEABLE LAYERS

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2909804A1 (en) * 1979-03-13 1980-09-18 Siemens Ag Thin doped metal film, esp. resistor prodn. by reactive sputtering - using evacuable lock contg. same gas mixt. as recipient and constant bias voltage
US4569742A (en) * 1983-06-20 1986-02-11 Honeywell Inc. Reactively sputtered chrome silicon nitride resistors
US4846949A (en) * 1987-10-30 1989-07-11 Southwall Technologies High resistivity chromium silicide films

Also Published As

Publication number Publication date
KR900017108A (en) 1990-11-15
JPH02294466A (en) 1990-12-05
EP0394658A1 (en) 1990-10-31
CA2015008A1 (en) 1990-10-24

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Legal Events

Date Code Title Description
FD Application lapsed

Owner name: SIEMENS AKTIENGESELLSCHAFT