FI65492C - Anordning foer detektering av elektromagnetiska vaogor - Google Patents
Anordning foer detektering av elektromagnetiska vaogor Download PDFInfo
- Publication number
- FI65492C FI65492C FI1344/74A FI134474A FI65492C FI 65492 C FI65492 C FI 65492C FI 1344/74 A FI1344/74 A FI 1344/74A FI 134474 A FI134474 A FI 134474A FI 65492 C FI65492 C FI 65492C
- Authority
- FI
- Finland
- Prior art keywords
- film
- contacts
- substrate
- pulse
- temperature
- Prior art date
Links
- 239000010408 film Substances 0.000 claims description 110
- 239000000758 substrate Substances 0.000 claims description 40
- 239000012528 membrane Substances 0.000 claims description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052770 Uranium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 230000005291 magnetic effect Effects 0.000 description 8
- 210000005069 ears Anatomy 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004141 dimensional analysis Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
- Radiation Pyrometers (AREA)
- Physical Vapour Deposition (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Claims (11)
1. Anordning för detektering av elektromagnetiska vagor, kanne- te cknad aven tunn film (1) av ledande material med inducerad anisotro-pi, atminstone ett par kontakter (3, 4) som är elektriskt anslutna till fil- men, samt medel inkluderande organ (5) för lokal upphettning av filmen medelst fokuserad energi, med vilka en temperaturgradient etableras i filmen i en rikt-ning, som bildar rät vinkel med filmens plan.
2. Anordning enligt patentkravet 1, kännetecknad därav, att organet för lokal upphettning av filmen är en elektronsträle.
3. Anordning enligt patentkravet 1, kännetecknad därav, att organet för lokal upphettning av filmen är en laserpuls.
4. Anordning enligt patentkravet 1,kännetecknad därav, att det ledande materialet är metalliskt.
5. Anordning enligt patentkravet 1,kännetecknad av ytterli-gare medel (6, 7) som är elektriskt inkopplade mellan kontakterna (3, 4), vilka medel reagerar för förekomsten av en utgängsspänning, da en temperaturgradient etableras över filmen (1).
6. Anordning enligt patentkravet 1, kännetecknad därav, att medlen med vilka temperaturgradienten etableras, innefattar ett elektriskt iso-lerande substrat (2) anordnat i stödrelation tili filmen varvid organet (5) för upphettning av en del av filmen ocksä upphettar substratet.
7. Anordning enligt patentkravet 1, kännetecknad därav, att kontaktparet (3, 4) är glidkontakter, anordnade i glidkontaktrelation med den tunna filmen.
8. Anordning enligt patentkravet 4, kännetecknad därav, att det metalliska materialet är en övergängsmetall.
9. Anordning enligt patentkravet 4,kännetecknad därav, att det metalliska materialet utgöres av titan, vanadin, krom, kobolt, nickel, järn, tantal, volfram, uran, osmium, indium, platina eller molybden.
10. Anordning enligt patentkravet 6, kännetecknad därav, att ytterligare medel finns för att befrämja etablerandet av en temperaturgradient, vilka medel innehäller ett antireflexionsskikt, som är absorberande vid atminstone den elektromagnetiska vaglängd, som detekteras, vilket skikt är anordnat ovanpä den tunna filmen.
11. Anordning enligt patentkravet 10,kännetecknad därav, att antireflexionsskiktet är en kvarts vaglängd tjockt vid den elektromagnetiska vaglängd, som detekteras.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00357317A US3851174A (en) | 1973-05-04 | 1973-05-04 | Light detector for the nanosecond-dc pulse width range |
US35731773 | 1973-05-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
FI65492B FI65492B (fi) | 1984-01-31 |
FI65492C true FI65492C (fi) | 1984-05-10 |
Family
ID=23405104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI1344/74A FI65492C (fi) | 1973-05-04 | 1974-05-02 | Anordning foer detektering av elektromagnetiska vaogor |
Country Status (14)
Country | Link |
---|---|
US (1) | US3851174A (sv) |
JP (1) | JPS554250B2 (sv) |
BE (1) | BE814524A (sv) |
BR (1) | BR7403622D0 (sv) |
CA (1) | CA1039828A (sv) |
CH (1) | CH566545A5 (sv) |
DK (1) | DK140679B (sv) |
FI (1) | FI65492C (sv) |
FR (1) | FR2228313B1 (sv) |
GB (1) | GB1455801A (sv) |
IT (1) | IT1009867B (sv) |
NL (1) | NL7405950A (sv) |
NO (1) | NO141328C (sv) |
SE (1) | SE392523B (sv) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3963925A (en) * | 1975-02-26 | 1976-06-15 | Texas Instruments Incorporated | Photoconductive detector and method of fabrication |
US4058729A (en) * | 1975-11-14 | 1977-11-15 | Arden Sher | Pyroelectric apparatus including effectively intrinsic semiconductor for converting radiant energy into electric energy |
US4152597A (en) * | 1975-11-14 | 1979-05-01 | Arden Sher | Apparatus including effectively intrinsic semiconductor for converting radiant energy into electric energy |
US4072864A (en) * | 1976-12-20 | 1978-02-07 | International Business Machines Corporation | Multilayered slant-angle thin film energy detector |
JPS53139780U (sv) * | 1977-04-11 | 1978-11-04 | ||
JPS585682B2 (ja) * | 1978-03-08 | 1983-02-01 | パ−カ−熱処理工業株式会社 | 溶剤類の回収方法 |
JPS54161753A (en) * | 1978-06-10 | 1979-12-21 | Fukuji Obata | Residue disposal plant in dry cleaning machine |
US4577104A (en) * | 1984-01-20 | 1986-03-18 | Accuray Corporation | Measuring the percentage or fractional moisture content of paper having a variable infrared radiation scattering characteristic and containing a variable amount of a broadband infrared radiation absorber |
JPS6133698A (ja) * | 1984-07-27 | 1986-02-17 | 株式会社 若土 | ドライクリ−ニング排出ガス処理方法 |
US5450053A (en) * | 1985-09-30 | 1995-09-12 | Honeywell Inc. | Use of vanadium oxide in microbolometer sensors |
US5300915A (en) * | 1986-07-16 | 1994-04-05 | Honeywell Inc. | Thermal sensor |
US5286976A (en) * | 1988-11-07 | 1994-02-15 | Honeywell Inc. | Microstructure design for high IR sensitivity |
JPH02280879A (ja) * | 1989-04-20 | 1990-11-16 | Chiyoda Seisakusho:Kk | 有機溶剤を使用する洗浄装置のフィルタ交換方法 |
US5784397A (en) * | 1995-11-16 | 1998-07-21 | University Of Central Florida | Bulk semiconductor lasers at submillimeter/far infrared wavelengths using a regular permanent magnet |
US9012848B2 (en) * | 2012-10-02 | 2015-04-21 | Coherent, Inc. | Laser power and energy sensor utilizing anisotropic thermoelectric material |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2935711A (en) * | 1952-03-11 | 1960-05-03 | Bell Telephone Labor Inc | Thermally sensitive target |
US2951175A (en) * | 1956-10-23 | 1960-08-30 | Fay E Null | Detector system |
US3122642A (en) * | 1961-07-05 | 1964-02-25 | William J Hitchcock | Infra-red imaging means using a magnetic film detector |
US3452198A (en) * | 1968-02-23 | 1969-06-24 | Honeywell Inc | Manufacture of detectors |
-
1973
- 1973-05-04 US US00357317A patent/US3851174A/en not_active Expired - Lifetime
-
1974
- 1974-03-19 FR FR7410671A patent/FR2228313B1/fr not_active Expired
- 1974-03-22 GB GB1298774A patent/GB1455801A/en not_active Expired
- 1974-04-09 SE SE7404778A patent/SE392523B/sv unknown
- 1974-04-16 CH CH522674A patent/CH566545A5/xx not_active IP Right Cessation
- 1974-04-17 IT IT21512/74A patent/IT1009867B/it active
- 1974-04-19 CA CA198,072A patent/CA1039828A/en not_active Expired
- 1974-04-24 JP JP4559574A patent/JPS554250B2/ja not_active Expired
- 1974-04-30 NO NO741564A patent/NO141328C/no unknown
- 1974-05-02 FI FI1344/74A patent/FI65492C/fi active
- 1974-05-03 BE BE143896A patent/BE814524A/xx not_active IP Right Cessation
- 1974-05-03 NL NL7405950A patent/NL7405950A/xx not_active Application Discontinuation
- 1974-05-03 BR BR3622/74A patent/BR7403622D0/pt unknown
- 1974-05-03 DK DK244274AA patent/DK140679B/da unknown
Also Published As
Publication number | Publication date |
---|---|
FR2228313A1 (sv) | 1974-11-29 |
BR7403622D0 (pt) | 1974-11-19 |
CA1039828A (en) | 1978-10-03 |
SE392523B (sv) | 1977-03-28 |
FI65492B (fi) | 1984-01-31 |
NL7405950A (sv) | 1974-11-06 |
US3851174A (en) | 1974-11-26 |
NO141328B (no) | 1979-11-05 |
NO141328C (no) | 1980-02-13 |
NO741564L (no) | 1974-11-05 |
DK140679B (da) | 1979-10-22 |
CH566545A5 (sv) | 1975-09-15 |
JPS554250B2 (sv) | 1980-01-29 |
DE2417004B2 (de) | 1976-10-14 |
DK140679C (sv) | 1980-05-05 |
JPS5016589A (sv) | 1975-02-21 |
FR2228313B1 (sv) | 1976-06-25 |
GB1455801A (en) | 1976-11-17 |
IT1009867B (it) | 1976-12-20 |
BE814524A (fr) | 1974-09-02 |
AU6859774A (en) | 1975-11-06 |
DE2417004A1 (de) | 1974-11-14 |
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