FI20105904A0 - spray head - Google Patents
spray headInfo
- Publication number
- FI20105904A0 FI20105904A0 FI20105904A FI20105904A FI20105904A0 FI 20105904 A0 FI20105904 A0 FI 20105904A0 FI 20105904 A FI20105904 A FI 20105904A FI 20105904 A FI20105904 A FI 20105904A FI 20105904 A0 FI20105904 A0 FI 20105904A0
- Authority
- FI
- Finland
- Prior art keywords
- spray head
- spray
- head
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20105904A FI20105904A0 (en) | 2010-08-30 | 2010-08-30 | spray head |
PCT/FI2011/050742 WO2012028775A1 (en) | 2010-08-30 | 2011-08-25 | Nozzle head |
CN201180041766.9A CN103080375B (en) | 2010-08-30 | 2011-08-25 | Injector head |
TW100130648A TW201210701A (en) | 2010-08-30 | 2011-08-26 | Nozzle head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20105904A FI20105904A0 (en) | 2010-08-30 | 2010-08-30 | spray head |
Publications (1)
Publication Number | Publication Date |
---|---|
FI20105904A0 true FI20105904A0 (en) | 2010-08-30 |
Family
ID=42669408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20105904A FI20105904A0 (en) | 2010-08-30 | 2010-08-30 | spray head |
Country Status (4)
Country | Link |
---|---|
CN (1) | CN103080375B (en) |
FI (1) | FI20105904A0 (en) |
TW (1) | TW201210701A (en) |
WO (1) | WO2012028775A1 (en) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02114530A (en) * | 1988-10-25 | 1990-04-26 | Mitsubishi Electric Corp | Thin film formation device |
US6972055B2 (en) * | 2003-03-28 | 2005-12-06 | Finens Corporation | Continuous flow deposition system |
US7537662B2 (en) * | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
US7601223B2 (en) * | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US8207063B2 (en) * | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
US8182608B2 (en) * | 2007-09-26 | 2012-05-22 | Eastman Kodak Company | Deposition system for thin film formation |
US8211231B2 (en) * | 2007-09-26 | 2012-07-03 | Eastman Kodak Company | Delivery device for deposition |
KR101431197B1 (en) * | 2008-01-24 | 2014-09-17 | 삼성전자주식회사 | Equipment for depositing atomic layer |
-
2010
- 2010-08-30 FI FI20105904A patent/FI20105904A0/en not_active Application Discontinuation
-
2011
- 2011-08-25 WO PCT/FI2011/050742 patent/WO2012028775A1/en active Application Filing
- 2011-08-25 CN CN201180041766.9A patent/CN103080375B/en active Active
- 2011-08-26 TW TW100130648A patent/TW201210701A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW201210701A (en) | 2012-03-16 |
CN103080375B (en) | 2016-04-13 |
CN103080375A (en) | 2013-05-01 |
WO2012028775A1 (en) | 2012-03-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD | Application lapsed |