ES8404102A1 - Procedimiento para la obtencion de capas dielectricas regenerables. - Google Patents

Procedimiento para la obtencion de capas dielectricas regenerables.

Info

Publication number
ES8404102A1
ES8404102A1 ES523692A ES523692A ES8404102A1 ES 8404102 A1 ES8404102 A1 ES 8404102A1 ES 523692 A ES523692 A ES 523692A ES 523692 A ES523692 A ES 523692A ES 8404102 A1 ES8404102 A1 ES 8404102A1
Authority
ES
Spain
Prior art keywords
gases
dielectric layers
polymerisation
healing dielectric
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES523692A
Other languages
English (en)
Spanish (es)
Other versions
ES523692A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of ES523692A0 publication Critical patent/ES523692A0/es
Publication of ES8404102A1 publication Critical patent/ES8404102A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/015—Special provisions for self-healing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/145—Organic dielectrics vapour deposited

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Insulating Materials (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Polymers (AREA)
ES523692A 1982-06-30 1983-06-29 Procedimiento para la obtencion de capas dielectricas regenerables. Expired ES8404102A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823224426 DE3224426A1 (de) 1982-06-30 1982-06-30 Verfahren zur herstellung von regenerierfaehigen dielektrikumsschichten durch polymerisation von gasen

Publications (2)

Publication Number Publication Date
ES523692A0 ES523692A0 (es) 1984-04-01
ES8404102A1 true ES8404102A1 (es) 1984-04-01

Family

ID=6167234

Family Applications (1)

Application Number Title Priority Date Filing Date
ES523692A Expired ES8404102A1 (es) 1982-06-30 1983-06-29 Procedimiento para la obtencion de capas dielectricas regenerables.

Country Status (6)

Country Link
US (1) US4478875A (OSRAM)
EP (1) EP0097945B1 (OSRAM)
JP (1) JPS599808A (OSRAM)
BR (1) BR8303472A (OSRAM)
DE (2) DE3224426A1 (OSRAM)
ES (1) ES8404102A1 (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3316693A1 (de) * 1983-05-06 1984-11-08 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum herstellen von amorphen kohlenstoffschichten auf substraten und durch das verfahren beschichtete substrate
DE3402971A1 (de) * 1984-01-28 1985-08-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Vorrichtung zur beschichtung eines substrates mittels plasma-chemical vapour deposition oder hochfrequenz-kathodenzerstaeubung
JP2741804B2 (ja) * 1991-06-14 1998-04-22 松下電器産業株式会社 コンデンサ及びその製造方法
US5876753A (en) * 1996-04-16 1999-03-02 Board Of Regents, The University Of Texas System Molecular tailoring of surfaces
US8003174B2 (en) * 2007-12-13 2011-08-23 Asm Japan K.K. Method for forming dielectric film using siloxane-silazane mixture

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865795A (en) * 1951-10-30 1958-12-23 Gen Electric Insulated electrical conductor and method of making the same
FR76669E (fr) * 1956-06-26 1961-11-17 Radiation Res Corp électrodes recouvertes de diélectrique

Also Published As

Publication number Publication date
JPH0452564B2 (OSRAM) 1992-08-24
DE3376916D1 (en) 1988-07-07
EP0097945B1 (de) 1988-06-01
DE3224426A1 (de) 1984-01-05
EP0097945A3 (en) 1985-05-22
US4478875A (en) 1984-10-23
JPS599808A (ja) 1984-01-19
ES523692A0 (es) 1984-04-01
EP0097945A2 (de) 1984-01-11
BR8303472A (pt) 1984-04-17

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19991108